IXGJ50N60C4D1 IXYS, IXGJ50N60C4D1 Datasheet
IXGJ50N60C4D1
Specifications of IXGJ50N60C4D1
Related parts for IXGJ50N60C4D1
IXGJ50N60C4D1 Summary of contents
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... CES CE CES GE = ±20V 0V, V GES 36A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXGJ50N60C4D1 Maximum Ratings 600 = 1MΩ 600 GE ±20 ± 220 = 10Ω ≤ CES 125 -55 ...
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... 100° 100°C 100 30V R (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGJ50N60C4D1 ISO TO-247 (IXGJ) OUTLINE Max 1. 1.00 °C/W °C/W Max. ...
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... T = 25ºC J 140 120 100 IXGJ50N60C4D1 Fig. 2. Extended Output Characteristics @ 15V GE 14V 13V 12V 11V Volts CE Fig. 4. Dependence of V Junction Temperature 15V ...
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... C oes res 100 Fig. 11. Maximum Transient Thermal Impedance Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXGJ50N60C4D1 Fig. 8. Gate Charge V = 300V 36A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125º ...
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... IXGJ50N60C4D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current - - - - E E off on Ω 15V 400V 125ºC, 25º Amperes C Fig ...
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... Ω 15V 400V 72A 36A 105 115 125 IXGJ50N60C4D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on) Ω 15V 400V 25º 125º ...
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... Fig. 27 Maximum Transient Thermal Impedance for Diode © 2011 IXYS CORPORATION, All Rights Reserved Fig. 22. Reverse Recovery Change -di / Fig. 25. Recovery Time t r 0.001 0.01 t IXGJ50N60C4D1 Fig. 23. Peak Reverse Current I vs -di RM Fig. 26. Peak Forward Voltage vs -di / and 0.1 ...