IXGT30N60C3D1 IXYS, IXGT30N60C3D1 Datasheet - Page 3

• Manufacturer Part Number: IXGT30N60C3D1
• Description: High-Frequency Range (>40khz), C-IGBT w/Diode
• Manufacturer: IXYS

Specifications of IXGT30N60C3D1

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 60
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 30
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.0
• Tfi, Typ, Tj=25°c, Igbt, (ns): 47
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.33
• Rthjc, Max, Igbt, (°c/w): 0.56
• If, Tj=110°c, Diode, (a): 30
• Rthjc, Max, Diode, (ºc/w): 0.90
• Package Style: TO-268

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5.5
5.0
4.5
4.0
3.5
3.0
2.5
40
35
30
25
20
15
10
40
35
30
25
20
15
10
5
0
5
0
0.0
0.0
7
0.4
0.4
8
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
Fig. 5. Collector-to-Emitter Voltage
0.8
0.8
9
vs. Gate-to-Emitter Voltage
1.2
1.2
10
I
V
C
CE
V
= 40A
1.6
V
CE
20A
10A
GE
- Volts
- Volts
1.6
11
- Volts
V
2.0
GE
= 15V
V
2.0
12
13V
11V
GE
2.4
= 15V
13V
J
J
2.4
13
T
= 125ºC
= 25ºC
J
2.8
= 25ºC
11V
2.8
14
9V
7V
3.2
7V
9V
3.2
3.6
15
180
160
140
120
100
1.1
1.0
0.9
0.8
0.7
0.6
0.5
80
60
40
20
70
60
50
40
30
20
10
0
0
25
0
5
Fig. 2. Extended Output Characteristics @ T
2
6
50
4
Fig. 4. Dependence of V
6
Fig. 6. Input Admittance
JunctionTemperature
7
T
J
- Degrees Centigrade
75
8
T
V
J
CE
= 125ºC
V
GE
- Volts
- 40ºC
25ºC
10
8
- Volts
I
C
IXGH30N60C3D1
IXGT30N60C3D1
I
= 10A
C
I
= 20A
100
12
C
= 40A
CE(sat)
9
14
on
V
125
16
V
GE
GE
10
J
= 15V
= 15V
= 25ºC
13V
11V
9V
7V
18
150
20
11