IXGR60N60C2C1 IXYS, IXGR60N60C2C1 Datasheet - Page 4

• Manufacturer Part Number: IXGR60N60C2C1
• Description: High-Frequency Range (>40khz), C-IGBT w/Diode
• Manufacturer: IXYS

Specifications of IXGR60N60C2C1

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 39
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 54
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.2
• Rthjc, Max, Igbt, (°c/w): 0.50
• If, Tj=110°c, Diode, (a): 14
• Rthjc, Max, Diode, (ºc/w): 1.75
• Package Style: ISOPLUS247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
1.00
0.10
0.01
100
80
70
60
50
40
30
20
10
0
10
0.0001
0
0
f
20
= 1 MHz
5
40
Fig. 7. Transconductance
10
60
Fig. 9. Capacitance
15
80
I
C
V
0.001
- Amperes
CE
T
100
J
- Volts
20
= - 40ºC
Fig. 11. Maximum Transient Thermal Impedance for IGBT
120
25ºC
125ºC
25
C ies
C oes
C res
140
30
160
35
180
0.01
Pulse Width - Seconds
200
40
110
100
90
80
70
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
50
0
Fig. 10. Reverse-Bias Safe Operating Area
V
I
I
T
R
dV / dt < 10V / ns
C
G
J
CE
G
0.1
= 50A
= 10mA
20
= 125ºC
= 2Ω
= 300V
150
40
Fig. 8. Gate Charge
250
Q
60
G
- NanoCoulombs
IXGR60N60C2C1
V
CE
350
80
- Volts
1
100
450
120
IXYS REF: G_60N60C2C1(7Y+SIC)12-17-08-A
550
140
160
650
10