IXGT39N60B IXYS, IXGT39N60B Datasheet - Page 4

• Manufacturer Part Number: IXGT39N60B
• Description: Mid-Frequency Range (15khz-40khz)
• Manufacturer: IXYS

Specifications of IXGT39N60B

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 76
• Ic90, Tc=90°c, Igbt, (a): 39
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 200
• Eoff, Typ, Tj=125°c, Igbt, (mj): 6
• Rthjc, Max, Igbt, (°c/w): 0.62
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-268

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
15
12
16
14
12
10
50
40
30
20
10
9
6
3
0
8
6
4
2
0
0
0
0
Fig. 9. Dependence of E
0
Fig. 7. Transconductance
T
V
V
T
J
GE
CE
J
V
I
I
C
G
= 125ºC
= -40
125ºC
CE
=20A
=10mA
= 15V
= 480V
20
10
Fig. 11. Gate Charge
25ºC
20
=300V
º
C
Q
40
20
G
40
- nanocoulombs
I
C
R
- Amperes
G
- Ohm s
60
60
30
OFF
80
80
I
I
I
40
C
C
C
= 78A
= 39A
= 19.5A
on R
100
100
50
G
120
120
60
4,835,592
4,850,072
4,881,106
4,931,844
IXGH39N60B
IXGH39N60BD1 IXGT39N60BD1
0.01
0.1
18
15
12
16
14
12
10
9
6
3
0
1
8
6
4
2
5,017,508
5,034,796
Fig. 12. Transient Thermal Response
0
10
1
Fig. 10. Dependence of E
Fig. 8. Dependence of E
Solid lines - R
Dashed lines - R
V
V
GE
CE
T
V
V
J
GE
CE
= 15V
= 480V
= 125
25
= 15V
= 480V
Pulse Width - milliseconds
5,049,961
5,063,307
T
J
º
Temperature
30
C
- Degrees Centigrades
G
50
10
= 5 Ohms
G
I
C
= 56 Ohms
- Amperes
5,187,117
5,237,481
IXGT39N60B
R
75
G
50
= 56 Ohms
R
100
G
100
OFF
= 5 Ohms
OFF
5,486,715
5,381,025
on I
70
on
125
C
I
19.5A
6,306,728B1
I
39A
C
I
78A
C
C
=
=
=
1000
150
90