IXGQ50N60B4D1 IXYS, IXGQ50N60B4D1 Datasheet - Page 4

• Manufacturer Part Number: IXGQ50N60B4D1
• Description: PT Trench IGBTs
• Manufacturer: IXYS

Specifications of IXGQ50N60B4D1

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 100
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 50
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 80
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.9
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): 18
• Rthjc, Max, Diode, (ºc/w): 1.6
• Package Style: TO-3P

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
0.001
100
0.01
10
0.1
50
45
40
35
30
25
20
15
10
0.00001
5
0
1
0
0
f
= 1 MHz
5
20
10
Fig. 7. Transconductance
40
Fig. 9. Capacitance
15
0.0001
I
V
C
CE
- Amperes
- Volts
60
20
25
80
C oes
C res
C ies
Fig. 11. Maximum Transient Thermal Impedance
T
J
= - 40ºC
30
125ºC
25ºC
100
0.001
35
Pulse Width - Second
120
40
120
100
16
14
12
10
80
60
40
20
8
6
4
2
0
0
100
0
V
I
I
T
R
dv / dt < 10V / ns
C
G
CE
J
G
150
0.01
= 36A
= 10mA
= 125ºC
= 10
= 300V
Fig. 10. Reverse-Bias Safe Operating Area
20
Ω
200
250
40
Fig. 8. Gate Charge
Q
G
300
- NanoCoulombs
V
CE
60
350
- Volts
IXGH50N60B4D1
IXGQ50N60B4D1
0.1
400
80
450
500
100
550
120
600
1