IXGK120N60B3 IXYS, IXGK120N60B3 Datasheet

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IXGK120N60B3

Manufacturer Part Number
IXGK120N60B3
Description
Mid-Frequency Range (15khz-40khz)
Manufacturer
IXYS
Datasheet

Specifications of IXGK120N60B3

Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
280
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
120
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
145
Eoff, Typ, Tj=125°c, Igbt, (mj)
4.7
Rthjc, Max, Igbt, (°c/w)
0.16
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-264
GenX3
IGBTs
Medium-Speed-Low-Vsat PT
IGBTs for 5-40kHz Switching
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
V
© 2010 IXYS CORPORATION, All Rights Reserved
C25
C110
LRMS
CM
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
Continuous
Transient
T
T
Terminal Current Limit
T
V
Clamped Inductive Load
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
Mounting Torque (IXGK)
Mounting Force (IXGX)
TO-264
PLUS247
T
T
Test Conditions
I
V
V
I
I
C
C
C
C
C
C
C
J
J
GE
CE
CE
600V
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C (Chip Capability)
= 110°C
= 25°C, 1ms
= 15V, T
= 25°C
= 500μA, V
= V
= 0V, V
= 100A, V
= 250μA, V
CES
, V
VJ
GE
GE
= 125°C, R
= ±20V
GE
= 0V
GE
CE
= 15V, Note 1
= 0V
= V
GE
GE
= 1MΩ
G
= 2Ω
T
J
= 125°C
IXGK120N60B3
IXGX120N60B3
20..120/4.5..27
600
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
V
Maximum Ratings
I
CM
CE
1.13/10
≤ ≤ ≤ ≤ ≤ V
= 300
Typ.
1.5
600
600
±20
±30
280
600
150
260
120
160
780
300
CES
10
6
Max.
±100
Nm/lb.in.
5.0
1.8
50
3 mA
N/lb.
°C
μA
nA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
A
V
V
V
g
g
V
I
V
t
TO-264 (IXGK)
PLUS247
G = Gate
C = Collector
Features
Advantages
Applications
C110
fi(typ)
Optimized for Low Conduction and
Switching Losses
Square RBSOA
High Current Handling Capability
International Standard Packages
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
C
E
TM
G
(IXGX)
C
E
≤ ≤ ≤ ≤ ≤
= 600V
= 120A
= 145ns
£
E
Tab = Collector
1.8V
DS99993A(09/10)
Tab
Tab
= Emitter

Related parts for IXGK120N60B3

IXGK120N60B3 Summary of contents

Page 1

... CES CE CES 0V ±20V GES 100A 15V, Note 1 CE(sat © 2010 IXYS CORPORATION, All Rights Reserved IXGK120N60B3 IXGX120N60B3 Maximum Ratings 600 = 1MΩ 600 GE ±20 ±30 280 120 160 600 = 2Ω 300 G CM ≤ ≤ ≤ ≤ ≤ V ...

Page 2

... CES 167 40 87 2.9 227 145 3 4.0 290 230 4.7 0.15 (Clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGK120N60B3 IXGX120N60B3 TO-264 AA ( IXGK) Outline Max Back Side ns Dim. Millimeter ns Min. Max 4.82 5.13 A1 2.54 2. 2.00 2.10 b 1.12 1.42 ...

Page 3

... T = 25ºC J 140 120 100 IXGK120N60B3 IXGX120N60B3 Fig. 2. Extended Output Characteristics @ 15V GE 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V I = 200A 100A 50A ...

Page 4

... C ies 250 200 C oes 150 100 C res 50 0 200 Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXGK120N60B3 IXGX120N60B3 Fig. 8. Gate Charge V = 300V 120A 10mA G 50 100 150 200 250 300 350 Q - NanoCoulombs G Fig ...

Page 5

... IXGK120N60B3 IXGX120N60B3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 480V 125º 25ºC ...

Page 6

... V = 15V GE = 480V 100A 50A 105 115 125 IXGK120N60B3 IXGX120N60B3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 2Ω 15V 480V 25ºC, 125º Amperes ...

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