IXGP14N120B IXYS, IXGP14N120B Datasheet
IXGP14N120B
Specifications of IXGP14N120B
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IXGP14N120B Summary of contents
Page 1
... CES CES ± GES 15V V C C90 GE CE(sat) © 2005 IXYS All rights reserved IXGA 14N120B IXGP 14N120B Maximum Ratings 1200 = 1 MΩ 1200 GE ±20 ± 100 Ω 0.8 V CES 150 -55 ... +150 150 -55 ...
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... higher T or increased off R thJC TO-220 R thCK IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values Min. Typ. Max. 5.0 9.0 35 535 ...
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... 0.5 1 1 Volts C E Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 28A Volts G E © 2005 IXYS All rights reserved º C 13V 11V 3.5 4 4.5 5 º C 1.7 = 15V 1.6 13V 1.5 11V 1.4 1.3 1.2 9V 1.1 1.0 0.9 7V 0.8 0.7 0.6 3 3 25º ...
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... 15V 1 400 960V CE 1 200 1 000 800 600 400 200 100 150 200 250 300 R - Ohms G IXYS reserves the right to change limits, test conditions, and dimensions 100 125º ...
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... V = 600V 14A 10mA nanoCoulombs G 1 0.1 0.1 © 2005 IXYS All rights reserved 14A 3 28A 0 100 85 95 105 115 125 1000 100 Fig. 17. Maxim um Transient Therm al Resistance ...