IXGR55N120A3H1 IXYS, IXGR55N120A3H1 Datasheet
IXGR55N120A3H1
Manufacturer Part Number
IXGR55N120A3H1
Description
High-Frequency Range (>40khz), C-IGBT w/Diode
Manufacturer
IXYS
Datasheet
1.IXGR55N120A3H1.pdf
(2 pages)
Specifications of IXGR55N120A3H1
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
70
Ic110, Tc=110°c, Igbt, (a)
30
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.35
Tfi, Typ, Tj=25°c, Igbt, (ns)
282
Eoff, Typ, Tj=125°c, Igbt, (mj)
29
Rthjc, Max, Igbt, (°c/w)
0.62
If, Tj=110°c, Diode, (a)
44
Rthjc, Max, Diode, (ºc/w)
0.42
Package Style
ISOPLUS247
GenX3
IGBT w/ Diode
(Electrically Isolated Tab)
Ultra-Low-Vsat PT IGBTs for
up to 3kHz Switching
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
V
F
Weight
Symbol
(T
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C110
F110
CM
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
C
ISOL
GE(th)
CE(sat)
J
= 25°C, Unless Otherwise Specified)
TM
Continuous
Transient
T
T
T
T
V
Clamped Inductive Load
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
50/60 Hz, 1 minute
Mounting Force
I
V
V
I
Test Conditions
T
T
Test Conditions
C
C
C
C
C
C
C
J
J
GE
CE
CE
1200V
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C ( Chip Capability )
= 110°C
= 110°C
= 25°C, 1ms
= 15V, T
= 25°C
= 1mA, V
= V
= 0V, V
= 55A, V
CES
, V
VJ
GE
GE
CE
GE
= 125°C, R
= ±20V
= 15V, Note 2
= V
= 0V
GE
GE
Note 1, T
T
= 1MΩ
G
J
= 125°C
= 3Ω
Advance Technical Information
J
IXGR55N120A3H1
= 125°C
20..120/4.5..27
@ 0.8 • V
Min.
-55 ... +150
-55 ... +150
Characteristic Values
3.0
Maximum Ratings
I
CM
= 110
1200
1200
2500
±20
±30
150
260
330
200
300
70
Typ.
2.20
30
CES
44
5
±100 nA
Max.
2.35
5.0
1.5 mA
25 μA
N/lb.
V~
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
A
V
g
V
I
V
ISOPLUS 247
G = Gate
E = Emitter
Features
Advantages
Applications
C110
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V~
Anti-Parallel Ultra Fast Diode
Optimized for Low Conduction Losses
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
CES
CE(sat)
G
Electrical Isolation
C
≤ ≤ ≤ ≤ ≤ 2.35V
= 1200V
= 30A
E
TM
C = Collector
Isolated Tab
DS100219(12/09)
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IXGR55N120A3H1 Summary of contents
Page 1
... CES CE CES 0V ±20V GES 55A 15V, Note 2 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXGR55N120A3H1 Maximum Ratings 1200 = 1MΩ 1200 GE ±20 ± 330 = 3Ω 110 0.8 • V CES 200 -55 ... +150 150 -55 ...
Page 2
... Characteristic Values Min. Typ. 1. 150°C 1.90 J 200 = 100°C 24.6 J (Clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGR55N120A3H1 ISOPLUS247 (IXGR) Outline Max 0.62 °C/W °C/W Max. 2 0.42 ° ...