IXGN82N120B3H1 IXYS, IXGN82N120B3H1 Datasheet - Page 3

• Manufacturer Part Number: IXGN82N120B3H1
• Description: Mid-Frequency Range (15khz-40khz), w/ Diode
• Manufacturer: IXYS

Specifications of IXGN82N120B3H1

• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 145
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 64
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 100
• Eoff, Typ, Tj=125°c, Igbt, (mj): 7.1
• Rthjc, Max, Igbt, (°c/w): 0.21
• If, Tj=110°c, Diode, (a): 42
• Rthjc, Max, Diode, (ºc/w): 0.42
• Package Style: SOT-227

© 2009 IXYS CORPORATION, All Rights Reserved
180
160
140
120
100
180
160
140
120
100
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
80
60
40
20
80
60
40
20
0
0
0.0
0.0
6
0.5
0.5
7
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
1.0
1.0
Fig. 5. Collector-to-Emitter Voltage
8
vs. Gate-to-Emitter Voltage
1.5
1.5
9
V
2.0
2.0
V
10
V
CE
CE
GE
- Volts
- Volts
- Volts
2.5
2.5
11
V
GE
V
= 15V
GE
I
13V
11V
3.0
3.0
12
C
= 15V
13V
11V
= 164A
82A
41A
J
J
= 125ºC
= 25ºC
3.5
3.5
13
9V
7V
5V
T
J
9V
7V
5V
= 25ºC
4.0
4.0
14
4.5
4.5
15
320
280
240
200
160
120
180
160
140
120
100
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
40
80
60
40
20
0
0
-50
3.5
0
Fig. 2. Extended Output Characteristics @ T
V
V
GE
GE
4.0
2
= 15V
-25
= 15V
13V
11V
4.5
4
Fig. 4. Dependence of V
0
5.0
6
7V
5V
Fig. 6. Input Admittance
T
9V
Junction Temperature
J
T
= 125ºC
IXGN82N120B3H1
J
25
- 40ºC
- Degrees Centigrade
5.5
25ºC
8
V
V
GE
CE
6.0
10
50
- Volts
- Volts
I
I
I
6.5
12
C
C
C
75
= 164A
= 82A
= 41A
CE(sat)
7.0
14
100
on
7.5
16
J
= 25ºC
125
8.0
18
150
8.5
20