IXGX82N120A3 IXYS, IXGX82N120A3 Datasheet

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IXGX82N120A3

Manufacturer Part Number
IXGX82N120A3
Description
Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
Manufacturer
IXYS
Datasheet

Specifications of IXGX82N120A3

Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
260
Ic110, Tc=110°c, Igbt, (a)
82
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.05
Tfi, Typ, Tj=25°c, Igbt, (ns)
780
Eoff, Typ, Tj=125°c, Igbt, (mj)
22.5
Rthjc, Max, Igbt, (°c/w)
0.1
Package Style
PLUS247
GenX3
IGBTs
Ultra-Low-Vsat PT IGBTs for
up to 3kHz Switching
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C110
LRMS
CM
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
Continuous
Transient
T
T
T
T
V
Clamped Inductive Load
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
Mounting Torque ( IXGK )
Mounting Force ( IXGX )
TO-264
PLUS247
I
I
V
V
I
Test Conditions
T
T
Test Conditions
C
C
C
C
C
C
C
C
J
J
GE
CE
CE
1200V
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C ( Chip Capability )
= 110°C
= 25°C (Lead RMS Limit)
= 25°C, 1ms
= 15V, T
= 25°C
= 250μA, V
= 1mA, V
= V
= 0V, V
= I
C110
CES
, V
, V
VJ
GE
GE
CE
GE
= 125°C, R
= ±20V
= 15V, Note 2
CE
= V
= 0V
= 0V
GE
GE
Note 1, T
T
= 1MΩ
G
J
= 125°C
= 2Ω
Preliminary Technical Information
J
= 125°C
IXGK82N120A3
IXGX82N120A3
20..120/4.5..27
@ 0.8 • V
1200
-55 ... +150
-55 ... +150
Characteristic Values
Min.
3.0
Maximum Ratings
I
CM
1.13/10
= 164
1200
1200
1250
±20
±30
260
120
150
260
580
300
CES
10
82
Typ.
1.83
1.95
6
±100 nA
Nm/lb.in.
2.05
Max.
5.0
2.5 mA
50 μA
N/lb.
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
A
V
V
g
g
V
I
V
TO-264 (IXGK)
PLUS247
G = Gate
C = Collector
Features
Advantages
Applications
C110
Optimized for Low Conduction Losses
International Standard Packages
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
CES
CE(sat)
G
G
C
TM
C
E
E
≤ ≤ ≤ ≤ ≤ 2.05V
E
= 1200V
= 82A
(IXGX)
E
Tab = Collector
Tab
DS100164A(10/09)
Tab
= Emitter

Related parts for IXGX82N120A3

IXGX82N120A3 Summary of contents

Page 1

... CES 0V ±20V GES 15V, Note 2 CE(sat) C C110 GE © 2009 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXGK82N120A3 IXGX82N120A3 Maximum Ratings 1200 = 1MΩ 1200 GE ±20 ±30 260 82 120 580 = 2Ω 164 0.8 • V CES 1250 -55 ... +150 150 -55 ...

Page 2

... CES 146 34 75 5.5 265 780 12 6.7 340 1250 22.5 0.15 measurement. CES (Clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGK82N120A3 IXGX82N120A3 TO-264 AA ( IXGK) Outline Max Dim. Millimeter Min. Max 4.82 5. 2.54 2.89 A2 2.00 2.10 1300 ns b 1.12 1. ...

Page 3

... T = 25ºC J 140 120 100 = 164A 82A 41A IXGK82N120A3 IXGX82N120A3 Fig. 2. Extended Output Characteristics @ 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 164A ...

Page 4

... C ies 140 120 100 80 C oes res Fig. 11. Maximum Transient Thermal Impedance 0.001 Pulse Width - Second IXGK82N120A3 IXGX82N120A3 Fig. 8. Gate Charge V = 600V 82A 10mA 100 150 200 Q ...

Page 5

... IXGK82N120A3 IXGX82N120A3 Fig. 13. Inductive Switching Energy Loss vs. Junction Temperature off 2Ω 15V 600V 80A 40A Degrees Centigrade J Fig ...

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