IXGT20N140C3H1 IXYS, IXGT20N140C3H1 Datasheet
IXGT20N140C3H1
Manufacturer Part Number
IXGT20N140C3H1
Description
High-Frequency Range (>40khz), C-IGBT w/Diode
Manufacturer
IXYS
Datasheet
1.IXGH20N140C3H1.pdf
(2 pages)
Specifications of IXGT20N140C3H1
Vces, (v)
1400
Ic25, Tc=25°c, Igbt, (a)
42
Vce(sat), Max, Tj=25°c, Igbt, (v)
5
Tfi, Typ, Tj=25°c, Igbt, (ns)
32
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.64
Rthjc, Max, Igbt, (°c/w)
0.5
Rthjc, Max, Diode, (ºc/w)
0.9
Package Style
TO-268
GenX3
w/ Diode
High-Speed PT IGBTs
for 20 - 50 kHz Switching
Symbol
V
V
V
V
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol
(T
V
I
I
V
© 2010 IXYS CORPORATION, All Rights Reserved
C25
C100
CM
A
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
d
J
= 25°C, Unless Otherwise Specified)
TM
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
V
Clamped Inductive Load
T
I
V
V
I
Test Conditions
C
C
J
J
C
C
C
C
C
C
GE
CE
CE
1400V IGBTs
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 100°C
= 25°C, 1ms
= 25°C
= 25°C
= 15V, T
= 25°C
= 250μA, V
= V
= 0V, V
= I
C100
CES
, V
, V
J
GE
= 125°C, R
GE
GE
= ±20V
= 0V
CE
= 15V, Note 1
= V
GE
T
GE
J
G
= 1MΩ
= 125°C, Note 1
= 5Ω
Advance Technical Information
T
J
= 125°C
IXGH20N140C3H1
IXGT20N140C3H1
Characteristic Values
Min.
3.0
-55 ... +150
-55 ... +150
V
Maximum Ratings
CE
I
1.13/10
CM
≤ ≤ ≤ ≤ ≤ V
1400
1400
= 40
300
260
Typ.
±20
±30
108
400
250
150
4.0
3.5
CES
42
20
20
6
4
±100
100
Max.
5.0
Nm/lb.in.
5.0
2.0
mA
mJ
μA
°C
°C
°C
nA
°C
°C
W
V
V
V
V
A
A
A
A
A
V
V
V
g
g
V
I
V
t
G = Gate
E = Emitter
Features
Advantages
Applications
TO-247 (IXGH)
TO-268 (IXGT)
C100
fi(typ)
Optimized for Low Switching Losses
Square RBSOA
High Avalanche Capability
Anti-Parallel Ultra Fast Diode
International Standard Packages
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
C
≤ ≤ ≤ ≤ ≤ 5.0V
= 1400V
= 20A
= 32ns
E
G
C
Tab = Collector
E
C (Tab)
C (Tab)
= Collector
DS100251(03/10)
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IXGT20N140C3H1 Summary of contents
Page 1
... 0V ±20V GES 15V, Note 1 CE(sat) C C100 GE © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXGH20N140C3H1 IXGT20N140C3H1 Maximum Ratings 1400 = 1MΩ 1400 GE ±20 ± 108 20 400 = 5Ω ≤ ≤ ≤ ≤ ≤ V ...
Page 2
... Characteristic Values Min. Typ 125°C 2 (Clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH20N140C3H1 IXGT20N140C3H1 TO-247 Outline Max Terminals Gate Emitter ns Dim. Millimeter ns Min. A 4.7 0. ...