IXGH28N140B3H1 IXYS, IXGH28N140B3H1 Datasheet

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IXGH28N140B3H1

Manufacturer Part Number
IXGH28N140B3H1
Description
Mid-Frequency Range (15khz-40khz), w/ Diode
Manufacturer
IXYS
Datasheet

Specifications of IXGH28N140B3H1

Vces, (v)
1400
Ic25, Tc=25°c, Igbt, (a)
60
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
28
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.6
Tfi, Typ, Tj=25°c, Igbt, (ns)
360
Eoff, Typ, Tj=125°c, Igbt, (mj)
6.5
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
15
Rthjc, Max, Diode, (ºc/w)
0.9
Package Style
TO-247
GenX3
IGBTs w/ Diode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
T
T
M
F
Weight
Symbol
(T
V
I
I
V
© 2010 IXYS CORPORATION, All Rights Reserved
C25
C110
F110
CM
A
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
d
J
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
Continuous
Transient
T
T
T
T
T
T
V
Clamped Inductive Load
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
Mounting Torque (IXGH & IXGK)
Mounting Force (IXGX)
TO-247 & PLUS247
TO-264
I
V
V
I
T
T
Test Conditions
C
C
C
C
C
C
C
C
C
J
J
GE
CE
CE
1400V
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C
= 110°C
= 110°C
= 25°C, 1ms
= 25°C
= 25°C
= 15V, T
= 25°C
= 250μA, V
= V
= 0V, V
= I
C110
CES
, V
, V
VJ
GE
GE
GE
= 125°C, R
= ±20V
= 15V, Note 1
CE
= 0V
= V
GE
GE
Note 2, T
T
= 1MΩ
G
J
= 125°C
= 5Ω
J
IXGH28N140B3H1
IXGK28N140B3H1
= 125°C
IXGX28N140B3H1
20..120/4.5..27
@ V
Min.
3.0
-55 ... +150
-55 ... +150
Characteristic Values
Maximum Ratings
I
CM
CES
1.13/10
= 120
< V
1400
1400
±20
±30
360
150
260
150
300
300
Typ.
3.05
28
3.00
60
15
28
10
CE
6
±100 nA
Nm/lb.in.
3.60
Max.
5.0
50 μA
1 mA
N/lb.
mJ
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
A
V
A
V
g
g
V
I
V
TO-247 (IXGH)
PLUS247 (IXGX)
TO-264 (IXGK)
G = Gate
C = Collector
Features
Advantages
Applications
C110
Optimized for Low Conduction and
Switching Losses
Square RBSOA
Avalanche Rated
Anti-Parallel Ultra Fast Diode
High Current Handling Capability
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
CES
CE(sat)
G
G
C
G
E
C
C
E
≤ ≤ ≤ ≤ ≤ 3.60V
= 1400V
= 28A
E
E
Tab = Collector
Tab
Tab
Tab
DS99736A(11/10)
= Emitter

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IXGH28N140B3H1 Summary of contents

Page 1

... CES CE CES 0V ±20V GES 15V, Note 1 CE(sat) C C110 GE © 2010 IXYS CORPORATION, All Rights Reserved IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 Maximum Ratings 1400 = 1MΩ 1400 GE ±20 ± 150 28 360 = 5Ω 120 < V CES CE 300 -55 ...

Page 2

... Characteristic Values Min. Typ 150°C 2.65 J 350 /dt = -200A/μs, 18.5 (Clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH28N140B3H1 IXGK28N140B3H1 IXGX28N140B3H1 Max 400 0.42 °C/W °C/W °C/W Max. ...

Page 3

... TO-247 Outline Terminals Gate PLUS247 Outline Terminals Gate © 2010 IXYS CORPORATION, All Rights Reserved IXGH28N140B3H1 IXGK28N140B3H1 Dim ∅ ∅ Collector Emitted S Dim ...

Page 4

... Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 56A C 6 28A 14A Volts GE IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXGH28N140B3H1 IXGK28N140B3H1 = 25ºC J 200 V = 15V GE 180 13V 11V 160 140 9V 120 100 3 ...

Page 5

... I - Amperes C Fig. 9. Capacitance 10,000 MHz 1,000 100 Volts CE 1 0.1 0.01 0.0001 0.001 © 2010 IXYS CORPORATION, All Rights Reserved IXGH28N140B3H1 IXGK28N140B3H1 100 120 140 120 100 C ies 80 C oes res ...

Page 6

... 960V CE 800 T = 125ºC J 600 T = 25ºC J 400 200 Amperes C IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXGH28N140B3H1 IXGK28N140B3H1 56A 28A 14A ...

Page 7

... V = 960V CE 120 100 I = 56A 28A Degrees Centigrade J © 2010 IXYS CORPORATION, All Rights Reserved IXGH28N140B3H1 IXGK28N140B3H1 140 160 140 120 120 100 100 56A 28A ...

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