IXER20N120 IXYS, IXER20N120 Datasheet
IXER20N120
Manufacturer Part Number
IXER20N120
Description
3rd Generation NPT Discrete IGBTs
Manufacturer
IXYS
Datasheet
1.IXER20N120.pdf
(4 pages)
Specifications of IXER20N120
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
29
Ic90, Tc=90°c, Igbt, (a)
19
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.8
Tfi, Typ, Igbt, (ns)
175
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.5
Rthjc, Max, Igbt, (°c/w)
0.96
If, Tc=90°c, Diode, (a)
-
Rthjc, Max, Diode, (k/w)
-
NPT
in ISOPLUS247™
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
IGBT
Symbol
V
V
I
I
I
V
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
R
CES
GES
C25
C90
CM
SC
d(on)
r
d(off)
f
GE(th)
GES
CE(sat)
on
off
CES
CEK
tot
ies
thJC
thCH
Gon
3
IGBT
Conditions
T
T
T
V
RBSOA Clamped inductive load; L = 00 µH
V
T
T
Conditions
I
I
V
V
Inductive load
L = 00 µH; T
V
V
V
V
with heatsink compound
C
C
VJ
C
C
GE
VJ
C
CE
CE
CE
GE
CE
CE
CE
= 20 A; V
= 0.6 mA; V
= 25°C
= 90°C
= 25°C
= 25°C to 50°C
= 25°C; non-repetitive
= 600 V; V
= V
= 0 V; V
= 600 V; I
= ± 5 V; R
= 25 V; V
= ±5 V; R
= 900 V; V
CES
; V
GE
GE
GE
GE
C
VJ
= 5 V;
GE
GE
GE
= ± 20 V
G
G
= 0 V;
= 25 A
= 0 V; f = MHz
= 25°C
= 68 W; T
= 68 W
= V
= 5 V; I
= ±5 V; R
CE
T
T
T
T
C
VJ
VJ
VJ
VJ
VJ
= 20 A
G
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 68 W
(T
VJ
= 25°C, unless otherwise specified)
G
IXER 20N20
min.
4.5
C
Characteristic Values
E
typ.
205
05
320
75
00
Maximum Ratings
2.4
2.8
0.2
4.
.5
.2
0.5
G
IXER 20N20D
200
max.
± 20
0.96
V
30
200
2.8
6.5
0.2
CES
29
9
40
0
C
E
K/W
K/W
mA
mA
mJ
mJ
nC
nA
nF
µs
ns
ns
ns
ns
W
V
V
A
A
A
V
V
V
I
V
V
ISOPLUS247™
G = Gate
Features
• NPT
• HiPerFRED™ diode
• ISOPLUS247™ package
Applications
• single switches
• choppers with complementary free
• phaselegs, H bridges, three phase
C25
- low saturation voltage
- positive temperature coefficient for
- fast switching
- short tail current for optimized
- fast reverse recovery
- low operating forward voltage
- low leakage current
- isolated back surface
- low coupling capacity between pins
- high reliability
- industry standard outline
wheeling diodes
bridges e.g. for
- power supplies, UPS
- AC, DC and SR drives
- induction heating
CES
CE(sat)typ
easy paralleling
performance in resonant circuits
and heatsink
G
C
3
E
IGBT
C = Collector
=
= 1200 V
= 2.4 V
IXER 20N120
IXER 20N120D1
36 A
Isolated Backside
E = Emitter
200808a
- 4
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IXER20N120 Summary of contents
Page 1
... 600 Gon thJC R with heatsink compound thCH IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved IXER 20N20 IXER 20N20D Maximum Ratings 200 ± 25° ...
Page 2
... Symbol Conditions C coupling capacity between shorted P pins and mounting tab in the case Weight ISOPLUS247™ Outline IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved Maximum Ratings Characteristic Values min. typ. max 25°C 2 ...
Page 3
... [nC] G Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved ...
Page 4
... 125° 200 400 600 800 1000 1200 1400 V [V] CE Fig. Reverse biased safe operating area RBSOA IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 4.0 250 t d(on) 3.5 200 t 3.0 r 2.5 150 2.0 100 1.5 1 ...