IXGR6N170A IXYS, IXGR6N170A Datasheet - Page 5

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IXGR6N170A

Manufacturer Part Number
IXGR6N170A
Description
High Voltage NPT IGBTs (1600V -1700V)
Manufacturer
IXYS
Datasheet

Specifications of IXGR6N170A

Vces, (v)
1700
Ic25, Tc=25°c, Igbt, (a)
5.5
Vce(sat), Max, Tj=25°c, Igbt, (v)
7
Tfi, Typ, Igbt, (ns)
32
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.25
Rthjc, Max, Igbt, (°c/w)
2.5
Package Style
ISOPLUS247
© 2010 IXYS CORPORATION, All Rights Reserved
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
25
30
E
T
V
E
R
V
J
off
CE
35
off
G
CE
40
= 125ºC , V
= 33
Fig. 12. Inductive Switching Energy Loss
= 850V
Fig. 14. Inductive Switching Energy Loss
= 850V
Ω ,
45
I
I
C
C
50
= 6A
= 12A
V
E
GE
E
GE
on
vs. Junction Temperature
on
55
= 15V
= 15V
- - - -
- - - -
T
vs. Gate Resistance
60
J
- Degrees Centigrade
65
R
G
70
- Ohms
75
80
85
90
95
I
I
C
C
100
= 6A
= 12A
105
110
115
125
120
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
3.5
3
2.5
2
1.5
1
0.5
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
6
E
R
V
off
CE
G
T
= 33
J
= 850V
Fig. 13. Inductive Switching Energy Loss
= 125ºC, 25ºC
7
Ω ,
V
E
GE
on
= 15V
- - - -
vs. Collector Current
8
I
C
- Amperes
9
IXGR6N170A
10
11
IXYS REF: G_6N170A(2N)8-12-10-A
12
3.5
3
2.5
2
1.5
1
0.5
0

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