IXGT22N170 IXYS, IXGT22N170 Datasheet
IXGT22N170
Manufacturer Part Number
IXGT22N170
Description
High Voltage NPT IGBTs (1600V -1700V)
Manufacturer
IXYS
Datasheet
1.IXGH22N170.pdf
(2 pages)
Specifications of IXGT22N170
Vces, (v)
1700
Ic25, Tc=25°c, Igbt, (a)
40
Ic90, Tc=90°c, Igbt, (a)
22
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.3
Tfi, Typ, Igbt, (ns)
-
Eoff, Typ, Tj=125°c, Igbt, (mj)
-
Rthjc, Max, Igbt, (°c/w)
0.6
If, Tc=90°c, Diode, (a)
-
Rthjc, Max, Diode, (k/w)
-
Package Style
TO-268
High Voltage
IGBT
Symbol
BV
V
I
I
V
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
M
Weight
© 2005 IXYS All rights reserved
GES
CM
CES
C25
C90
J
JM
stg
GE(th)
CE(sat)
GEM
CES
CGR
GES
C
d
CES
Test Conditions
I
I
V
V
V
I
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
Mounting torque (TO-247)
C
C
C
GE
J
J
C
C
C
GE
C
CE
CE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250 µA, V
= 250 µA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
, V
GE
GE
VJ
CES
= 15 V
= ±20 V
= 125°C, R
GE
CE
= V
= 0 V
GE
GE
= 1 MΩ
G
= 5 Ω
T
T
T
(T
J
J
J
J
= 25°C
= 125°C
= 25°C
= 25°C, unless otherwise specified)
Advance Technical Data
TO-247 AD
TO-268
1700
IXGH 22N170
IXGT 22N170
min.
3.0
Characteristic Values
1.13/10
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
typ.
2.0
I
CM
1700
1700
±20
±30
130
= 50
260
210
150
300
44
22
max.
CES
±100
6
4
Nm/lb.in.7
500
5.0
3.0
50
µA
µA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
V
A
A
A
A
g
g
TO-268 (IXGT)
TO-247 AD (IXGH)
V
I
V
t
G = Gate,
E = Emitter,
Features
Applications
Advantages
C25
fi(typ)
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
High current handling capability
MOS Gate turn-on
- drive simplicity
Rugged NPT structure
Molding epoxies meet UL 94 V-0
flammability classification
Capacitor discharge & pulser circuits
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
CES
CE(sat)
G
G
C
= 1700
=
=
=
E
C = Collector,
TAB = Collector
E
290 ns
3.3
40
DS99325(02/05)
C (TAB)
C (TAB)
A
V
V
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IXGT22N170 Summary of contents
Page 1
... CES ± GES CE(sat) C C90 GE © 2005 IXYS All rights reserved Advance Technical Data IXGH 22N170 IXGT 22N170 Maximum Ratings 1700 = 1 MΩ 1700 GE ±20 ± 130 = 5 Ω 0.8 V 210 -55 ...
Page 2
... off R thJC R (TO-247) thCK Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J min. ...