IXSH16N60U1 IXYS, IXSH16N60U1 Datasheet
IXSH16N60U1
Manufacturer Part Number
IXSH16N60U1
Description
S-Series Medium speed, SC Rated IGBTs w/Diode
Manufacturer
IXYS
Datasheet
1.IXSH16N60U1.pdf
(2 pages)
Specifications of IXSH16N60U1
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
32
Ic90, Tc=90°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Igbt, (ns)
-
Eoff, Typ, Tj=125°c, Igbt, (mj)
-
Rthjc, Max, Igbt, (k/w)
-
Package Style
TO-247
© 2000 IXYS All rights reserved
Low V
with Diode
Short Circuit SOA Capability
Preliminary data
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering for 10s
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
BV
V
I
I
V
C25
C90
CM
SC
CES
GES
J
JM
stg
CGR
C
CES
GES
GEM
GE(th)
CE(sat)
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 300 mH
V
R
T
CE(sat)
Test Conditions
I
I
V
V
V
I
C
C
C
C
C
C
C
J
J
GE
GE
G
CE
GE
CE
= 82 W, non repetitive
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 15 V, V
= 25°C
= 250 mA, V
= 750 mA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
, V
IGBT
J
CE
GE
GE
CES
= 125°C, R
= 360 V, T
= ± 20 V
= 15 V
GE
CE
= 0 V
= V
GE
GE
G
= 1 MW
J
= 150 W
= 125°C
T
T
J
J
(T
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
IXSH 16N60U1
min.
600
3.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
typ.
CM
1.8
= 32
± 20
± 30
600
600
100
150
300
260
CES
32
16
52
5
2
± 100
max.
200
6.5
2.3
1
°C
°C
°C
°C
°C
ms
mA
W
mA
nA
V
V
V
V
A
A
A
A
g
V
V
V
V
I
V
TO-247 AD
G = Gate,
E = Emitter,
Features
• Latest generation HDMOS
• International standard package
• Guaranteed Short Circuit SOA
• Low V
• High current handling capability
• MOS Gate turn-on
• Fast fall time for switching speeds
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• High power density
C25
capability
- for low on-state conduction losses
- drive simplicity
up to 20 kHz
CES
CE(sat)typ
CE(sat)
G
C
E
C = Collector,
TAB = Collector
= 600V
=
= 1.8V
TM
98532 (7/98)
16A
process
C (TAB)
1 - 2
Related parts for IXSH16N60U1
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
IXSH16N60U1 Summary of contents
Page 1
... GE = ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXSH 16N60U1 Maximum Ratings 600 = 1 MW 600 GE ± 20 ± 150 ...
Page 2
... J min. typ. / A/ms 2 100°C 165 25° IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXSH 16N60U1 TO-247 AD (IXSH) Outline max ...