IXGT4N250C IXYS, IXGT4N250C Datasheet - Page 2

• Manufacturer Part Number: IXGT4N250C
• Description: VHV NPT IGBTs (2500V - 4000V)
• Manufacturer: IXYS

Specifications of IXGT4N250C

• Vces, (v): 2500
• Ic25, Tc=25°c, Igbt, (a): 13
• Ic110, Tc=110°c, Igbt, (a): 4
• Vce(sat), Max, Tj=25°c, Igbt, (v): 6
• Tfi, Typ, Igbt, (ns): 29
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.8
• Tf, Typ, Igbt, (ns): -
• Rthjc, Max, Igbt, (k/w): 0.82

Symbol Test Conditions
(
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
R
R
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
T
d(off)
fi
d(off)
fi
fS
(off)
(off)
ies
oes
res
thJC
thCS
g(on)
ge
gc
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
J
= 25°C Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
Additional provisions for lead to lead voltage isolation are required at V
Inductive Load, T
I
V
Note 2
Inductive Load, T
I
V
Note 2
I
V
I
TO-247
C
C
C
C
CE
CE
CE
= 4A, V
= 4A, V
= 4A, V
= 4A, V
= 0.5 • V
= 0.5 • V
= 25V, V
ADVANCE TECHNICAL INFORMATION
GE
GE
GE
CE
= 15V
= 15V
= 15V, V
= 10V, Note 1
CES
CES
GE
= 0V, f = 1MHz
, R
, R
4,835,592
4,881,106
G
G
J
J
= 20Ω
= 20Ω
= 25°C
= 125°C
CE
= 1000V
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
Min.
4.0
5,237,481
5,381,025
5,486,715
Characteristic Values
1150
0.36
0.80
Typ.
0.21
350
385
6,162,665
6,259,123 B1
6,306,728 B1
6.0
19
57
21
29
86
52
8
CE
(Clamp), T
0.82
Max.
CE
6,404,065 B1
6,534,343
6,583,505
> 1200V.
J
°C/W
or R
°C/W
nC
nC
nC
mJ
mJ
pF
pF
pF
ns
ns
ns
ns
S
G
.
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-268 Outline
TO-247 Outline
Terminals: 1 - Gate
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1
3 - Emitter
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
3 - Emitter
.4
2
7,005,734 B2
7,063,975 B2
IXGH4N250C
IXGT4N250C
3
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
e
.8
2,4 - Collector
0.205 0.225
0.232 0.252
∅ P
2 - Collector
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216