IXGF36N300 IXYS, IXGF36N300 Datasheet

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IXGF36N300

Manufacturer Part Number
IXGF36N300
Description
VHV NPT IGBTs (2500V - 4000V)
Manufacturer
IXYS
Datasheet

Specifications of IXGF36N300

Vces, (v)
3000
Ic25, Tc=25°c, Igbt, (a)
36
Ic110, Tc=110°c, Igbt, (a)
18
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.7
Tfi, Typ, Igbt, (ns)
-
Eoff, Typ, Tj=125°c, Igbt, (mj)
-
Tf, Typ, Igbt, (ns)
540
Rthjc, Max, Igbt, (k/w)
0.78
Package Style
ISOPLUS i4-Pak
High Voltage IGBT
For Capacitor Discharge
Applications
( Electrically Isolated Tab)
Symbol
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
F
V
Weight
Symbol
(T
BV
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
CES
GES
J
JM
stg
L
SOLD
C
CES
GES
GEM
C
ISOL
GE(th)
CE(sat)
J
CES
= 25°C, Unless Otherwise Specified)
Test Conditions
T
Continuous
Transient
T
T
T
V
Clamped Inductive Load
T
1.6 mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
50/60Hz, 1 minute
Test Conditions
I
I
V
V
I
I
C
C
C
C
J
C
C
C
C
GE
CE
CE
= 25°C to 150°C
= 25°C
= 110°C
= 25°C, V
= 20V, T
= 25°C
= 250μA, V
= 250μA, V
= 0.8 • V
= 0V, V
= 36A, V
= 100A
VJ
GE
GE
CES
GE
= 125°C, R
= ±20V
= 20V, 1ms
GE
= 15V, Note 1
CE
, V
= 0V
= V
GE
= 0V
GE
Note 2 ,T
G
= 2Ω
J
= 125°C
IXGF36N300
V
20..120/4.5..27
CE
3000
3.0
Min.
-55 ... +150
-55 ... +150
Characteristic Values
Maximum Ratings
0.8 • V
I
CM
= 300
4000
3000
± 30
± 20
300
260
400
160
150
Typ.
36
18
CES
5
±200
Nm/lb-in.
5.0
2.7
5.2
50
Max.
2 mA
V~
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
g
V
I
V
ISOPLUS i4-Pak
1 = Gate
2 = Emitter
Features
Applications
Advantages
C25
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
4000V Electrical Isolation
High Peak Current Capability
Low Saturation Voltage
Molding Epoxies Meet UL 94 V-0
Flammability Classification
Capacitor Discharge
Pulser Circuits
High Power Density
Easy to Mount
CES
CE(sat)
1
2
≤ ≤ ≤ ≤ ≤
=
5
= 3000V
5 = Collector
TM
2.7V
36A
Isolated Tab
DS99979C(11/09)

Related parts for IXGF36N300

IXGF36N300 Summary of contents

Page 1

... CES CE CES 0V ±20V GES 36A 15V, Note 1 CE(sat 100A C © 2009 IXYS CORPORATION, All Rights Reserved IXGF36N300 Maximum Ratings 3000 ± 20 ± 400 = 2Ω 300 G CM ≤ V 0.8 • CES 160 -55 ... +150 150 -55 ... +150 300 260 20 ...

Page 2

... 185 215 540 0.15 30 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGF36N300 ISOPLUS i4-Pak Max 0.78 °C/W °C/W °C/W 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 ...

Page 3

... J = 25V 20V 15V 13V 11V 3.0 3.5 4.0 4.5 5 25º IXGF36N300 Fig. 2. Extended Output Characteristics @ 25V GE 20V Volts CE Fig. 4. Dependence of V Junction Temperature 1 15V GE 1 72A C 1.4 1 36A C 1.0 0.8 I ...

Page 4

... Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXGF36N300 Fig. 8. Gate Charge V = 600V 30A 10mA NanoCoulombs G Fig. 10. Capacitance MHz C ies C oes ...

Page 5

... V = 15V GE = 1500V 250 230 1,000 210 190 170 100 IXGF36N300 Fig. 13. Resistive Turn-on Rise Time vs. Drain Current T = 125º 2Ω 15V 1500V 25º Amperes C Fig ...

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