IXBL64N250 IXYS, IXBL64N250 Datasheet

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IXBL64N250

Manufacturer Part Number
IXBL64N250
Description
VHV (2500V-3000V)
Manufacturer
IXYS
Datasheet

Specifications of IXBL64N250

Vces, (v)
2500
Ic25, Tc=25°c, (a)
116
Ic110, Tc=110°c, (a)
46
Vce(sat), Typ, Tj=25°c, (v)
3
Tf Typ, Tj=25°c, (ns)
170
Rthjc, Max, (k/w)
0.25
Package Style
ISOPLUS I5-PAK
High Voltage, High Gain
BiMOSFET
Monolithic Bipolar
MOS Transistor
(Electrically Isolated Tab)
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
T
(SCSOA)
P
T
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
V
© 2010 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
CES
GES
SC
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
C
ISOL
GE(th)
CE(sat)
J
CES
= 25°C, Unless Otherwise Specified)
Test Conditions
Continuous
Transient
T
T
T
V
Clamped Inductive Load
V
R
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
50/60Hz, 1 minute
Mounting Force with Clip
I
I
V
V
I
T
T
Test Conditions
C
C
C
C
C
C
C
J
J
GE
GE
CE
CE
G
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C
= 110°C
= 25°C, 1ms
= 15V, T
= 25°C
= 5Ω, V
= 15V, T
= 1mA, V
= 4mA, V
= 0.8 • V
= 0V, V
= 64A, V
TM
CE
VJ
GE
J
CES
GE
= 125°C
CE
= 125°C, R
= 1250V, Non-Repetitive
GE
= ± 25V
= 15V, Note 1
, V
= V
= 0V
GE
GE
Note 2, T
= 0V
GE
= 1MΩ
G
= 1Ω
Advance Technical Information
T
J
J
= 125°C
= 125°C
IXBL64N250
V
2500
30..170 / 7..36
3.0
CE
Min.
Characteristic Values
-55 ... +150
-55 ... +150
< 0.8 • V
Maximum Ratings
I
CM
= 160
2500
2500
2500
500
150
260
±35
750
300
±25
116
Typ.
CES
10
46
2.5
3.1
8
±200 nA
Max.
Nm/lb-in.
5.0
3.0
50 μA
6 mA
V~
°C
°C
°C
°C
°C
μs
W
V
V
V
V
A
A
A
V
V
V
V
A
g
V
I
V
ISOPLUS i5-Pak
G = Gate
E = Emitter
Features
Advantages
Applications
C110
Uninterrupted Power Supplies
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V∼
High Blocking Voltage
Low Switching Losses
High Current Handling Capability
Anti-Parallel Diode
High Power Density
Low Gate Drive Requirement
Switch-Mode and Resonant-Mode
Power Supplies
Capacitor Discharge Circuits
Laser Generators
CE(sat)
CES
G
E
C
Electrical Isolation
≤ ≤ ≤ ≤ ≤ 3.0V
= 2500V
= 46A
C = Collector
TM
Isolated Tab
DS100259(04/10)
(UPS)

Related parts for IXBL64N250

IXBL64N250 Summary of contents

Page 1

... CES GE Note 0V ± 25V GES 64A 15V, Note 1 CE(sat © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXBL64N250 Maximum Ratings 2500 = 1MΩ 2500 GE ±25 ±35 116 46 750 = 1Ω 160 < 0.8 • ...

Page 2

... Characteristic Values Min. Typ. 160 /dt = 650A/μs 480 >1200V CE 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXBL64N250 ISOPLUS i5-Pak Max SYM INCHES MIN MAX ns A 0.190 ...

Page 3

... C 4.0 3.5 3 64A C 2.5 2.0 75 100 125 150 120 100 BV CES GE 105 125 IXBL64N250 Fig. 2. Output Characteristics @ T 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 Volts CE Fig. 4. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage I = 256A C 128A 64A Volts GE Fig. 6. Input Admittance T = 125º ...

Page 4

... IXBL64N250 Fig. 8. Forward Voltage Drop of Intrinsic Diode T = 25º 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 Volts F Fig. 10. Capacitance MHz Volts CE Fig ...

Page 5

... V = 15V GE 300 = 1250V 250 230 250 210 200 190 150 170 100 150 50 180 200 220 240 260 IXBL64N250 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current T = 125º 1Ω 15V 1250V 25º 100 120 ...

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