MMIX4B12N300 IXYS, MMIX4B12N300 Datasheet

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MMIX4B12N300

Manufacturer Part Number
MMIX4B12N300
Description
VHV (2500V-3000V)
Manufacturer
IXYS
Datasheet

Specifications of MMIX4B12N300

Vces, (v)
3000
Ic25, Tc=25°c, (a)
22
Ic90, Tc=90°c, (a)
12
Ic110, Tc=110°c, (a)
-
Vce(sat), Typ, Tj=25°c, (v)
3.2
Tf Typ, Tj=25°c, (ns)
540
Tfi Typ, Tj=25°c, (ns)
-
Gate Drive, (v)
-
Rthjc, Max, (k/w)
1.25
High Voltage, High Gain
BIMOSFET
Bipolar MOS Transistor
(Electrically Isolated Tab)
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
F
V
Weight
Symbol Test Conditions
(T
BV
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
C90
CM
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
C
ISOL
GE(th)
CE(sat)
J
CES
= 25°C Unless Otherwise Specified)
Test Conditions
I
I
V
V
I
T
T
Continuous
Transient
T
T
T
V
Clamped Inductive Load
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Force
50/60Hz, 1 Minute
C
C
C
C
J
C
C
C
C
CE
CE
GE
= 25°C to 150°C, R
= 250μA, V
= 250μA, V
= I
= 25°C to 150°C
= 25°C
= 90°C
= 25°C
= 25°C, V
= 0V, V
= 0.8 • V
= 15V, T
C90
TM
, V
GE
Monolithic
GE
CES
VJ
= 15V, Note 1
GE
= ± 20V
GE
CE
= 125°C, R
, V
= 19V, 1ms
= 0V
= V
GE
GE
= 0V
GE
10ms
= 1M
Note 2, T
G
= 30
Advance Technical Information
Ω
Ω
T
J
J
= 125°C
MMIX4B12N300
= 125°C
V
50..200 / 11..45
CE
3000
Min.
3.0
-55 ... +150
-55 ... +150
E1C3
Characteristic Values
0.8 • V
G1
G3
C1
I
CM
Maximum Ratings
= 30
4000
3000
3000
± 20
± 30
100
150
300
260
CES
22
12
98
52
Typ.
8
3.5
2.8
±100
Max.
Nm/lb.in.
5.0
3.2
25
1 mA
E2C4
G4
E3E4
C2
G2
V~
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
V
A
A
A
A
A
V
g
V
I
V
G = Gate
C = Collector
Features
Advantages
Applications
C90
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
4000V Electrical Isolation
High Peak Current Capability
Low Saturation Voltage
Low Gate Drive Requirement
High Power Density
Switch-Mode and Resonant-Mode
Power Supplies
Capacitor Discharge Circuits
High Blocking Voltage
C1
G3
CES
CE(sat)
E1C3
Isolated Tab
G1
E1C3
G1
≤ ≤ ≤ ≤ ≤ 3.2V
= 3000V
= 12A
G3
C1
E
E3E4
DS100392(10/11)
C2
G4
= Emitter
G2
E2C4
E2C4
G2
G4
C2
E3E4

Related parts for MMIX4B12N300

MMIX4B12N300 Summary of contents

Page 1

... CES CE CES 0V ± 20V GES 15V, Note 1 CE(sat) C C90 GE © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information MMIX4B12N300 C1 G1 E1C3 G3 Maximum Ratings 3000 Ω 3000 ± 20 ± 10ms 52 Ω ≤ ...

Page 2

... J 395 175 530 0.05 30 Characteristic Values Min. Typ. 1.4 21 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 MMIX4B12N300 Max 1.25 °C/W °C/W °C/W Max. 2.1 V μs A > 1200V. ...

Page 3

... Package Outline © 2011 IXYS CORPORATION, All Rights Reserved MMIX4B12N300 ...

Page 4

... T = 25º MMIX4B12N300 Fig. 2. Extended Output Characteristics @ 25V GE 20V 15V 10V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V GE -50 - Degrees Centigrade J Fig. 6. Input Admittance T = 125º ...

Page 5

... MMIX4B12N300 Fig. 8. Forward Voltage Drop of Intrinsic Diode T = 25º 0 Volts F Fig. 10. Capacitance MHz C ies C oes C res 0 Fig. 12. Maximum Transient Thermal Impedance ...

Page 6

... V = 15V GE 600 = 1250V 260 550 220 500 450 180 400 140 350 100 300 60 250 MMIX4B12N300 Fig. 14. Resistive Turn-on Rise Time vs. Collector Current R = 10Ω 15V 1250V Amperes C Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature ...

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