IXBF55N300 IXYS, IXBF55N300 Datasheet
IXBF55N300
Specifications of IXBF55N300
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IXBF55N300 Summary of contents
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... CES CE CES GE Note 0V ± 25V GES 55A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved IXBF55N300 Maximum Ratings 3000 Ω 3000 ± 25 ± 600 Ω 110 G CM ≤ V 0.8 • ...
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... J 585 215 260 0.15 Characteristic Values Min. Typ. 1.9 /dt = 100A/μs 54 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXBF55N300 ISOPLUS i4-Pak Max 0.35 °C/W °C/W Max 2.5 V μs A 6,404,065 B1 6,683,344 ...
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... T = 25ºC 160 J 140 120 100 3 IXBF55N300 Fig. 2. Extended Output Characteristics @ 25V GE 20V 15V 10V Volts CE Fig. 4. Dependence of V CE(sat) Junction Temperature V = 15V 110A 55A 27.5A ...
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... IXBF55N300 Fig. 8. Forward Voltage Drop of Intrinsic Diode T = 25ºC J 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 Volts F Fig. 10. Capacitance MHz Volts CE Fig. 12. Maximum Transient Thermal Impedance ...
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... CE 320 260 300 240 220 280 200 260 180 240 160 T = 125ºC, 25ºC J 140 220 160 180 200 220 IXBF55N300 Fig. 14. Resistive Turn-on Rise Time vs. Collector Current T = 125º 2Ω 15V 1250V 25º 100 120 ...
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... Fig. 20. Forward-Bias Safe Operating Area 1000 V Limit (sat) CE 100 25µs 100µs 10 1ms 1 10ms T 0.1 T 100ms Single Pulse DC 0.01 1 1,000 10,000 IXBF55N300 @ T = 75º 150º 75º 100 1,000 V - Volts DS IXYS REF: B_55N300(8T) 11-03-11-C 25µs 100µs 1ms 10ms 100ms DC 10,000 ...