MIXA20W1200TML IXYS, MIXA20W1200TML Datasheet - Page 6

• Manufacturer Part Number: MIXA20W1200TML
• Description: 1200V XPT Modules
• Manufacturer: IXYS

Specifications of MIXA20W1200TML

• Vces, Igbt, (v): 1200
• Ic80, Igbt, (a): 20
• Vce(sat), Typ, Tj 25°c (v): 1.8
• Eon, Typ, 125°c (mj): 1.55
• Eoff, Typ, 125°c (mj): 1.7
• Rthjc, Typ, Igbt (k/w): 1.26
• Ic80, Fwd, (a): 22
• Rthjc, Fwd, (k/w): 1.5
• Package Style: E1-Pack

IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
I
[A]
[mJ]
[A]
E
RR
I
Diode D1 - D6
F
rec
1.4
1.2
1.0
0.8
0.6
0.4
0.2
40
30
20
10
35
30
25
20
15
10
0
5
0
200
200
0.0
Fig. 11 Typ. recovery energy E
Fig. 9 Typ. peak reverse current I
Fig. 7 Typ. Forward current versus V
T
V
T
V
VJ
R
VJ
R
0.5
= 125°C
= 125°C
= 600 V
= 600 V
300
300
T
T
VJ
VJ
= 125°C
= 25°C
1.0
di
400
400
di
F
F
V
/dt [A/µs]
/dt [A/µs]
F
1.5
[V]
500
500
2.0
rec
versus di/dt
RM
600
600
vs. di/dt
2.5
F
40 A
20 A
10 A
40 A
20 A
10 A
700
700
3.0
[K/W]
Z
[ns]
t
thJC
rr
[µC]
Q
rr
0.01
700
600
500
400
300
200
100
0.1
10
0.001
5
4
3
2
1
0
1
200
200
Fig. 8 Typ. reverse recov.charge Q
Fig. 10 Typ. recovery time t
Fig. 12 Typ. transient thermal impedance
300
300
0.01
MIXA20W1200TML
1 0.252 0.0015 0.461 0.0015
2 0.209 0.03
3 0.541 0.03
4 0.258 0.08
400
400
di
di
F
F
/dt [A/µs]
R
t
/dt [A/µs]
p
0.1
i
IGBT
[s]
500
500
rr
t
i
versus di/dt
T
V
T
V
0.291 0.03
0.423 0.03
0.326 0.08
VJ
VJ
R
R
1
R
= 125°C
= 125°C
= 600 V
600
= 600 V
600
rr
i
vs. di/dt
FRD
20 A
10 A
40 A
40 A
20 A
10 A
Diode
IGBT
20110118b
t
i
700
700
6 - 6
10