MIXA20W1200TMH IXYS, MIXA20W1200TMH Datasheet - Page 5

• Manufacturer Part Number: MIXA20W1200TMH
• Description: 1200V XPT Modules
• Manufacturer: IXYS

Specifications of MIXA20W1200TMH

• Vces, Igbt, (v): 1200
• Ic80, Igbt, (a): 20
• Vce(sat), Typ, Tj 25°c (v): 1.8
• Eon, Typ, 125°c (mj): 1.55
• Eoff, Typ, 125°c (mj): 1.7
• Rthjc, Typ, Igbt (k/w): 1.26
• Ic80, Fwd, (a): 22
• Rthjc, Fwd, (k/w): 1.5
• Package Style: Mini-Pack2

[A]
[A]
[mJ]
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
I
I
C
C
E
IGBT T1 - T6
30
25
20
15
10
30
25
20
15
10
5
0
5
0
4
3
2
1
0
0
5
0
Fig. 3 Typ. tranfer characteristics
Fig. 5 Typ. switching energy vs. collector current
Fig. 1 Typ. output characteristics
V
R
V
V
T
GE
VJ
CE
GE
G
T
6
= 15 V
VJ
=
5
= 125°C
= 600 V
= ±15 V
= 125°C
56 Ω
7
10
T
1
VJ
= 25°C
8
V
T
15
V
CE
VJ
I
GE
C
= 25°C
9
[V]
[A]
[V]
20
2
10
T
VJ
= 125°C
25
11
30
3
12
E
E
off
on
13
35
[mJ]
V
[V]
E
[A]
GE
I
C
2.8
2.4
2.0
1.6
1.2
30
25
20
15
10
20
15
10
Fig. 6 Typ. switching energy vs. gate resistance
5
0
5
0
40
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. turn-on gate charge
T
VJ
I
V
V
T
I
V
C
E
E
C
VJ
CE
GE
CE
= 125°C
=
off
on
60
10
= 125°C
= 600 V
= ±15 V
= 15 A
= 600 V
1
15 A
V
MIXA20W1200TMH
GE
80
= 15 V
20
17 V
19 V
2
R
Q
100
G
V
30
G
CE
[Ω]
[nC]
[V]
3
120
40
13 V
140
4
50
20091127a
11 V
9 V
5 - 6
160
60
5