MIXA40WB1200TED IXYS, MIXA40WB1200TED Datasheet - Page 7

• Manufacturer Part Number: MIXA40WB1200TED
• Description: 1200V XPT Modules
• Manufacturer: IXYS

Specifications of MIXA40WB1200TED

• Vces, Igbt, (v): 1200
• Ic80, Igbt, (a): 40
• Vce(sat), Typ, Tj 25°c (v): 1.8
• Eon, Typ, 125°c (mj): 3.8
• Eoff, Typ, 125°c (mj): 4.1
• Rthjc, Typ, Igbt (k/w): 0.64
• Ic80, Fwd, (a): 29
• Rthjc, Fwd, (k/w): 1.2
• Package Style: E2-Pack

IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
I
[A]
[mJ]
[A]
E
RR
Inverter D1 - D6
I
F
rec
2.0
1.6
1.2
0.8
0.4
0.0
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
300
300
0.0
Fig. 5 Typ. recovery energy E
Fig. 9 Typ. peak reverse current I
Fig. 7 Typ. Forward current versus V
T
V
T
V
400
400
VJ
R
VJ
R
0.5
= 125°C
= 600 V
= 125°C
= 600 V
T
T
VJ
VJ
500
500
= 125°C
= 25°C
1.0
600
600
di
di
F
F
V
/dt [A/µs]
/dt [A/µs]
F
700
700
1.5
[V]
800
800
2.0
rec
versus di/dt
900 1000 1100
900 1000 1100
RM
vs. di/dt
2.5
F
60 A
30 A
15 A
60 A
30 A
15 A
3.0
[ns]
t
[K/W]
Z
rr
[µC]
Q
thJC
rr
700
600
500
400
300
200
100
0.01
0.1
10
7
6
5
4
3
2
1
0
300
300
0.001
1
Fig. 8 Typ. reverse recov.charge Q
Fig. 10 Typ. recovery time t
Fig. 12 Typ. transient thermal impedance
400
400
T
V
VJ
R
MIXA40WB1200TED
= 125°C
= 600 V
500
500
0.01
600
600
1 0.152 0.0025 0.341 0.0025
2 0.072 0.03
3 0.308 0.03
4 0.108 0.08
di
di
F
F
/dt [A/µs]
/dt [A/µs]
R
700
700
t
p
i
0.1
IGBT
[s]
800
800
rr
t
i
versus di/dt
T
V
900 1000 1100
900 1000 1100
VJ
R
0.217 0.03
0.348 0.03
0.294 0.08
rr
= 125°C
1
= 600 V
R
vs. di/dt
i
FRD
Diode
60 A
30 A
15 A
60 A
30 A
15 A
IGBT
20110916e
t
i
7 - 8
10