MIXA61H1200ED IXYS, MIXA61H1200ED Datasheet
MIXA61H1200ED
Specifications of MIXA61H1200ED
Related parts for MIXA61H1200ED
MIXA61H1200ED Summary of contents
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... Thin wafer technology combined with the XPT design results in a competitive low V CE(sat) • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved ...
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... I max. reverse recovery current RM t reverse recovery time rr E reverse recovery energy rec R thermal resistance junction to case thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Conditions T VJ continuous transient ...
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... V 0 Symbol Definitions V IGBT free wheeling diode IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Conditions I < 1 mA; 50/60 Hz ISOL with heatsink compound Conditions MIXA 61H1200ED Ratings min ...
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... Data Matrix: FOSS-ID 6 digits Batch # 6 digits Location Marking on Product Delivering Mode Base Qty Ordering Code MIXA61H1200ED Box MIXA 61H1200ED Dimensions 0.0394“) Part number M = Module I = IGBT X = XPT A = standard 61 = Current Rating [ Bridge 1200 = Reverse Voltage [ E2-Pack ...
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... [mJ [A] C Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved off [mJ] 100 120 MIXA 61H1200ED 100 ...
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... V [V] F Fig. 7 Typ. Forward current versus V 100000 10000 R [Ω] 1000 100 [°C] C Fig. 9 Typ. NTC resistance versus temperature IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 4.0 3.2 2.4 E rec [mJ] 1.6 0.8 0.0 2.0 2.5 3 0.1 thJC [K/W] 0.01 100 125 ...