MIXA81H1200EH IXYS, MIXA81H1200EH Datasheet

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MIXA81H1200EH

Manufacturer Part Number
MIXA81H1200EH
Description
1200V XPT Modules
Manufacturer
IXYS
Datasheet

Specifications of MIXA81H1200EH

Vces, Igbt, (v)
1200
Ic80, Igbt, (a)
84
Vce(sat), Typ, Tj 25°c (v)
1.8
Eon, Typ, 125°c (mj)
6.8
Eoff, Typ, 125°c (mj)
8.3
Rthjc, Typ, Igbt (k/w)
0.32
Ic80, Fwd, (a)
90
Rthjc, Fwd, (k/w)
0.4
Package Style
E3-Pack
IGBT Module
H Bridge
Part name
MIXA81H1200EH
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
Features:
• Easy paralleling due to the positive
• Rugged XPT design
• Thin wafer technology combined with
• SONIC™ diode
temperature coefficient of the on-state
voltage
(Xtreme light Punch Through) results in:
the XPT design results in a competitive
low V
- fast and soft reverse recovery
- low operating forward voltage
- square RBSOA @ 3x I
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
CE(sat)
(Marking on product)
C
13, 21
14, 20
1
2
3
4
Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
resonant-mode power supplies
10
11
12
9
19
15
Package:
• "E3-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
• Optimizes pin layout
MIXA81H1200EH
V
I
V
C25
CES
CE(sat)
= 1200 V
= 120 A
=
1.8 V
20110518a
E72873
1 - 6

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MIXA81H1200EH Summary of contents

Page 1

... Application: • AC motor drives • Solar inverter • Medical equipment • Uninterruptible power supply • Air-conditioning systems • Welding equipment • Switched-mode and resonant-mode power supplies MIXA81H1200EH V = 1200 V CES I = 120 A C25 V = CE(sat Package: • "E3-Pack" standard outline • ...

Page 2

... I = 100 600 /dt = -1600 A/µ 100 (per diode MIXA81H1200EH Ratings min. typ. max. Unit = 25°C 1200 ±20 ±30 = 25°C 120 = 80° 25°C 390 = 25°C 1.8 2.1 = 125°C 2.1 = 25°C 5.4 6.0 6.5 = 25°C ...

Page 3

... R 0 IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Conditions I < 1 mA; 50/60 Hz ISOL with heatsink compound Conditions MIXA81H1200EH Ratings min. typ. max. Unit -40 125 150 -40 125 3000 200 ...

Page 4

... IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Marking on Product Delivering Mode Base Qty Ordering Code MIXA81H1200EH MIXA81H1200EH 2D Data Matrix FOSS-ID 6 digits XXX XX-XXXXX YYCWx Logo Part name Date Code Part number M = Module I = IGBT ...

Page 5

... Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 125°C [A] 2.5 3 [mJ] 120 140 160 MIXA81H1200EH 13 V 140 120 100 T = 125° 0.0 0.5 1.0 1 ...

Page 6

... F 200 A 100 [ns] 1800 2000 2200 vs. di/dt RM 200 A 100 A Z thJC 50 A [K/W] 0.01 1800 2000 2200 versus di/dt rec MIXA81H1200EH 125° 600 1000 1200 1400 1600 1800 di /dt [A/µs] F Fig. 8 Typ. reverse recov.charge Q 700 T VJ ...

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