MIXA100W1200TEH IXYS, MIXA100W1200TEH Datasheet - Page 3
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MIXA100W1200TEH
Manufacturer Part Number
MIXA100W1200TEH
Description
1200V XPT Modules
Manufacturer
IXYS
Datasheet
1.MIXA100W1200TEH.pdf
(6 pages)
Specifications of MIXA100W1200TEH
Vces, Igbt, (v)
1200
Ic80, Igbt, (a)
108
Vce(sat), Typ, Tj 25°c (v)
1.8
Eon, Typ, 125°c (mj)
8.5
Eoff, Typ, 125°c (mj)
11
Rthjc, Typ, Igbt (k/w)
0.25
Ic80, Fwd, (a)
90
Rthjc, Fwd, (k/w)
0.4
Package Style
E3-Pack
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
Module
Symbol
T
T
T
V
CTI
M
d
d
R
R
Weight
Equivalent Circuits for Simulation
Symbol
V
R
V
R
Temperature Sensor NTC
Symbol
R
B
I
VJ
VJM
stg
S
A
ISOL
pin-chip
thCH
0
0
0
0
25
25/50
d
V
0
Definitions
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
comparative tracking index
mounting torque (M5)
creep distance on surface
strike distance through air
resistance pin to chip
thermal resistance case to heatsink
R
Definitions
IGBT
free wheeling diode
Definitions
resistance
0
[Ω]
R
100000
10000
1000
100
10
0
Typ. NTC resistance vs. temperature
Conditions
Conditions
I
with heatsink compound
Conditions
T1 - T6
D1 - D6
ISOL
25
< 1 mA; 50/60 Hz
50
T
C
75
[°C]
100
125
T
T
T
C
VJ
VJ
T
MIXA100W1200TEH
= 25°C
= 150°C
= 150°C
C
= 25°C unless otherwise stated
150
min.
min.
min.
4.75
-40
-40
7.5
10
3
3375
0.02
Ratings
typ.
Ratings
typ.
Ratings
typ.
300
5.0
2.5
max.
max.
3000
max.
13.8
1.25
5.25
125
150
125
200
1.1
8.5
6
20110505a
3 - 6
Unit
Unit
Unit
K/W
mm
mm
mW
Nm
mW
mW
kW
V~
°C
°C
°C
K
V
V
g