MIXA151W1200EH IXYS, MIXA151W1200EH Datasheet

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MIXA151W1200EH

Manufacturer Part Number
MIXA151W1200EH
Description
1200V XPT Modules
Manufacturer
IXYS
Datasheet

Specifications of MIXA151W1200EH

Vces, Igbt, (v)
1200
Ic80, Igbt, (a)
150
Vce(sat), Typ, Tj 25°c (v)
1.8
Eon, Typ, 125°c (mj)
100
Eoff, Typ, 125°c (mj)
16
Rthjc, Typ, Igbt (k/w)
0.18
Ic80, Fwd, (a)
130
Rthjc, Fwd, (k/w)
0.28
Package Style
E3-Pack
Six-Pack
XPT IGBT
Part name
MIXA151W1200EH
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
Features:
• Easy paralleling due to the positive
• Rugged XPT design
• Thin wafer technology combined with
• SONIC™ diode
temperature coefficient of the on-state
voltage
(Xtreme light Punch Through) results in:
the XPT design results in a competitive
low V
- fast and soft reverse recovery
- low operating forward voltage
- square RBSOA @ 3x I
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
CE(sat)
(Marking on product)
13, 21
14, 20
1
2
3
4
C
T1
T4
D1
D4
5
6
7
8
Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
resonant-mode power supplies
T2
T5
D2
D5
10
11
12
9
T3
T6
D3
D6
19
17
15
MIXA 151W1200EH
Package:
• "E3-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
• Optimizes pin layout
V
I
V
C25
CES
CE(sat)
= 1200 V
= 220 A
=
1.8 V
20110719a
E72873
1 - 6

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MIXA151W1200EH Summary of contents

Page 1

... Six-Pack XPT IGBT Part name (Marking on product) MIXA151W1200EH 13 14, 20 Features: • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge ...

Page 2

... I max. reverse recovery current RM t reverse recovery time rr E reverse recovery energy rec R thermal resistance junction to case thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Conditions T VJ continuous transient 150 A ...

Page 3

... V 0 Symbol Definitions V IGBT free wheeling diode IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Conditions I < 1 mA; 50/60 Hz ISOL with heatsink compound Conditions MIXA 151W1200EH Ratings min ...

Page 4

... Marking on Product Delivering Mode Base Qty Ordering Code MIXA151W1200EH MIXA 151W1200EH 2D Data Matrix FOSS-ID 6 digits XXX XX-XXXXX YYCWx Logo Part name Date Code Part number M = Module I = IGBT X = XPT A = standard 151 = Current Rating [ Six-Pack ...

Page 5

... I [A] C Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved = 125° 250 300 MIXA 151W1200EH 300 ...

Page 6

... Z thJC 0.1 [K/W] R 0.027 0.002 0.054 0.002 0.028 0.03 0.05 0.03 0.06 0.03 0.096 0.03 0.065 0.08 0.08 0.08 0.01 0.001 0.01 0.1 t [s] Fig. 9 Typ. transient thermal impedance IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved E rec [mJ] 2.0 2.5 3.0 100000 Diode 10000 IGBT R 1000 [Ω] IGBT FRD ...

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