MIXA300PF1200TSF IXYS, MIXA300PF1200TSF Datasheet
MIXA300PF1200TSF
Specifications of MIXA300PF1200TSF
Related parts for MIXA300PF1200TSF
MIXA300PF1200TSF Summary of contents
Page 1
... 125°C 2.3 VJ 5.4 6 25°C 0.1 0 125° 1 250 100 500 A 1.5 C 0.085 MIXA300PF1200TSF I = 300 A C80 V = 1200 V CES V = 2.0 V CE(sat) typ Features • XPT IGBT technology • low saturation voltage V • low switching losses • ...
Page 2
... Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. max. = 25°C 135 0.14 Characteristic Values min. typ. max. 4.75 5.0 5.25 3375 Maximum Ratings -40...+125 +150 -40...+125 3400 Characteristic Values min. typ. max. 0.55 0.03 350 + 2x R·I F MIXA300PF1200TSF K/W kΩ K °C °C ° mΩ K/W g 20110728 ...
Page 3
... Dimensions 0.0394") IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved MIXA300PF1200TSF 20110728 ...
Page 4
... IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved I C [A] = 125° [ [mJ] 400 500 600 MIXA300PF1200TSF 600 500 19 V 400 T = 125°C VJ 300 200 100 ...
Page 5
... Fig. 7 Typ. forward characteristics of free wheeling diode IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 0.08 0.06 Z thJC 0.04 [K/W] 0.02 = 25°C 0.00 2.5 3.0 3.5 MIXA300PF1200TSF single pulse 1 10 100 1000 t [ms] Fig. 8 Typ. transient thermal impedance diode IGBT 10000 20110728 ...