MIXA450PF1200TSF IXYS, MIXA450PF1200TSF Datasheet
MIXA450PF1200TSF
Specifications of MIXA450PF1200TSF
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MIXA450PF1200TSF Summary of contents
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... 125°C 2.3 VJ 5.4 6 25°C 0 125° 1 250 100 450 A 1.5 C 0.057 MIXA450PF1200TSF I = 450 A C80 V = 1200 V CES V = 2.0 V CE(sat) typ Features • XPT IGBT technology • low saturation voltage V • low switching losses • ...
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... VJ min. typ. max. = 25°C 200 0.075 Characteristic Values min. typ. max. 4.75 5.0 5.25 3375 Maximum Ratings -40...+125 +150 -40...+125 3400 Characteristic Values min. typ. max. 0.55 0.03 350 + 2x R·I F MIXA450PF1200TSF 2 K/W kΩ K °C °C ° mΩ K/W g 20100914 ...
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... Dimensions 0.0394") IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved MIXA450PF1200TSF 20100914 ...
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... Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved I C [A] = 125° [ [mJ] MIXA450PF1200TSF 900 800 700 600 T = 125°C 500 VJ 400 300 200 100 ...
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... F Fig. 7 Typ. forward characteristics of free wheeling diode IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 0.08 0.06 Z thJC 0.04 [K/W] 0.02 0.00 2.5 3.0 3.5 MIXA450PF1200TSF single pulse 1 10 100 1000 t [ms] Fig. 8 Typ. transient thermal impedance diode IGBT 10000 20100914 ...