DPF80C200HB IXYS, DPF80C200HB Datasheet

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DPF80C200HB

Manufacturer Part Number
DPF80C200HB
Description
Manufacturer
IXYS
Datasheet
1.DPF80C200HB.pdf (3 pages)

Specifications of DPF80C200HB

Vrrm, (v)
200
Ifavm, D = 0.5, Total, (a)
80
Ifavm, D = 0.5, Per Diode, (a)
40
@ Tc, (°c)
140
Ifrms, (a)
70
Ifsm, 10 Ms, Tvj=45°c, (a)
560
Vf, Max, Tvj =150°c, (v)
0.95
@ If, (a)
40
Trr, Typ, Tvj =25°c, (ns)
35
Irm , Typ, Tvj =100°c, (a)
4.0
@ -di/dt, (a/µs)
200
Tvjm, (°c)
175
Rthjc, Max, (k/w)
0.70
Package Style
TO-247AD
HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPF 80 C 200 HB
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
Symbol
V
I
V
I
V
r
R
T
P
I
I
t
C
IXYS reserves the right to change limits, conditions and dimensions.
©
Features / Advantages:
R
FAV
FSM
RM
F
rr
RRM
F0
VJ
tot
- Power dissipation within the diode
- Turn-on loss in the commutating switch
F
J
thJC
2009 IXYS all rights reserved
average forward current
thermal resistance junction to case
junction capacitance
Definition
max. repetitive reverse voltage
reverse current
forward voltage
threshold voltage
slope resistance
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
for power loss calculation only
Applications:
● Antiparallel diode for high frequency
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
● Uninterruptible power supplies (UPS)
Conditions
V
V
I
I
I
I
rectangular
t = 10 ms
I
-di
V =
F
F
F
F
F
R
R
R
switching devices
supplies (SMPS)
=
F
=
=
=
=
=
=
/dt
100
50
Data according to IEC 60747and per diode unless otherwise specified
200
200
=
40
80
40
80
1
A;
V;
V
V
A
A
A
A
100
V
(50 Hz), sine
R
f = 1 MHz
A/µs
=
d =
2
100
0.5
V
3
T
T
T
T
T
T
T
T
T
T
T
T = 125°C
T
T = 125°C
VJ
VJ
VJ
VJ
VJ
C
VJ
C
VJ
VJ
VJ
VJ
VJ
VJ
= 25
=
=
=
=
= 140°C
= 175°C
=
= 45°C
=
=
=
150
150
25
25
25
25
25
25
DPF 80 C 200 HB
● Housing:
V
I
t
Package:
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
FAV
°C
°C
°C
°C
°C
°C
°C
°C
°C
rr
RRM
min.
=
=
=
-55
R a t i n g s
TO-247
2x
typ.
200
tbd
tbd
81
35
Backside: cathode
40
35 ns
4
max.
1.22
1.45
0.95
1.20
0.67
0.70
advanced
V
A
200
175
215
560
0.2
5.8
40
1
20091020
Unit
K/W
m
mA
µA
pF
°C
ns
ns
W
Ω
V
V
V
V
V
A
V
A
A
A

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DPF80C200HB Summary of contents

Page 1

... FSM I max. reverse recovery current RM t reverse recovery time rr C junction capacitance J IXYS reserves the right to change limits, conditions and dimensions. 2009 IXYS all rights reserved © Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● ...

Page 2

... IXYS reserves the right to change limits, conditions and dimensions. 2009 IXYS all rights reserved © Conditions 1) per pin Part Name Marking on Product DPF80C200HB Similar Part Package DPF60C200HJ ISOPLUS247 (3) Data according to IEC 60747and per diode unless otherwise specified DPF 80 C 200 HB Ratings min ...

Page 3

... Outlines TO-247 IXYS reserves the right to change limits, conditions and dimensions. 2009 IXYS all rights reserved © Sym. Inches Millimeter min. max. min. max. A 0.185 0.209 4.70 5.30 A1 0.087 0.102 2.21 2.59 A2 0.059 0.098 1.50 2.49 D 0.819 0.845 20.79 21.45 E 0.610 0.640 15.48 16.24 E2 0.170 0.216 4.31 5.48 e 0.215 BSC 5.46 BSC L 0.780 0.800 19 ...

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