DPG30P300PJ IXYS, DPG30P300PJ Datasheet

no-image

DPG30P300PJ

Manufacturer Part Number
DPG30P300PJ
Description
Manufacturer
IXYS
Datasheet
1.DPG30P300PJ.pdf (4 pages)

Specifications of DPG30P300PJ

Vrrm, (v)
300
Ifavm, D = 0.5, Total, (a)
30
Ifavm, D = 0.5, Per Diode, (a)
30
@ Tc, (°c)
135
Ifrms, (a)
35
Ifsm, 10 Ms, Tvj=45°c, (a)
450
Vf, Max, Tvj =150°c, (v)
0.99
@ If, (a)
30
Trr, Typ, Tvj =25°c, (ns)
35
Irm , Typ, Tvj =100°c, (a)
8.5
@ -di/dt, (a/µs)
200
Tvjm, (°c)
175
Rthjc, Max, (k/w)
1.05
Package Style
ISOPLUS220
HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Phase leg
Part number
DPG 30 P 300 PJ
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
Symbol
V
V
V
r
T
P
I
I
t
C
IXYS reserves the right to change limits, conditions and dimensions.
©
I
I
R
Features / Advantages:
R
FAV
FSM
RM
F
rr
RRM
F0
VJ
tot
- Power dissipation within the diode
- Turn-on loss in the commutating switch
F
J
thJC
2010 IXYS all rights reserved
Definition
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
threshold voltage
slope resistance
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
junction capacitance
for power loss calculation only
● Antiparallel diode for high frequency
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
● Uninterruptible power supplies (UPS)
rectangular
I
-di
Applications:
Conditions
V
V
I
I
I
I
t = 10 ms
V =
F
F
F
F
F
R
R
R
switching devices
supplies (SMPS)
=
F
=
=
=
=
=
=
/dt
200
30
300
300
Data according to IEC 60747and per diode unless otherwise specified
=
1
30
60
30
60
A;
V;
V
V
A
A
A
A
200
(50 Hz), sine
V
R
f = 1 MHz
A/µs
=
d =
2
200
0.5
V
3
T
T
T
T
T
T
T
T
T
T
T = 125°C
T
T = 125°C
T
VJ
VJ
VJ
VJ
VJ
C
VJ
C
VJ
VJ
VJ
VJ
VJ
VJ
= 25
=
=
=
=
= 135°C
= 175°C
=
= 45°C
=
=
=
150
150
25
25
25
25
25
25
DPG 30 P 300 PJ
● Housing:
●rIndustry standard outline
●rDCB isolated backside
●rIsolation Voltage 3000 V
●rEpoxy meets UL 94V-0
●rRoHS compliant
V
I
t
Package:
°C
°C
°C
°C
°C
°C
°C
°C
°C
FAV
rr
RRM
min.
=
=
=
-55
R a t i n g s
ISOPLUS220
typ.
300
8.5
60
35
65
Backside: isolated
30
35 ns
3
max.
1.28
1.58
0.99
1.32
0.60
1.05
V
A
300
175
145
450
0.2
30
11
1
20100126a
Unit
K/W
mΩ
mA
µA
pF
°C
ns
ns
W
V
V
V
V
V
A
V
A
A
A

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DPG30P300PJ Summary of contents

Page 1

... FSM I max. reverse recovery current RM t reverse recovery time rr C junction capacitance J IXYS reserves the right to change limits, conditions and dimensions. 2010 IXYS all rights reserved © Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● ...

Page 2

... IXYS reserves the right to change limits, conditions and dimensions. 2010 IXYS all rights reserved © Conditions per terminal second minute terminal to terminal terminal to backside Part Name Marking on Product DPG30P300PJ Data according to IEC 60747and per diode unless otherwise specified DPG 30 P 300 PJ Ratings min. typ. 0.50 -55 20 3600 3000 1 ...

Page 3

... Outlines ISOPLUS220 IXYS reserves the right to change limits, conditions and dimensions. 2010 IXYS all rights reserved © A SYM Note NOTE: 1. Bottom heatsink is electrically isolated from Pin ...

Page 4

... E rec [µ 200 400 600 -di /dt [A/µs] F Fig. 7 Typ. recovery energy E versus -di /dt rec F IXYS reserves the right to change limits, conditions and dimensions. 2010 IXYS all rights reserved © 0.3 [µC] 0 125°C 0 200 ...

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