DPG10P400PJ IXYS, DPG10P400PJ Datasheet

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DPG10P400PJ

Manufacturer Part Number
DPG10P400PJ
Description
Manufacturer
IXYS
Datasheet
1.DPG10P400PJ.pdf (4 pages)

Specifications of DPG10P400PJ

Vrrm, (v)
400
Ifavm, D = 0.5, Total, (a)
10
Ifavm, D = 0.5, Per Diode, (a)
10
@ Tc, (°c)
145
Ifrms, (a)
35
Ifsm, 10 Ms, Tvj=45°c, (a)
130
Vf, Max, Tvj =150°c, (v)
1.03
@ If, (a)
10
Trr, Typ, Tvj =25°c, (ns)
45
Irm , Typ, Tvj =100°c, (a)
5.5
@ -di/dt, (a/µs)
200
Tvjm, (°c)
175
Rthjc, Max, (k/w)
2.50
Package Style
ISOPLUS220
HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Phase leg
Part number
DPG 10 P 400 PJ
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
Symbol
V
I
V
I
V
r
R
T
P
I
I
t
C
IXYS reserves the right to change limits, conditions and dimensions.
©
Features / Advantages:
R
FAV
FSM
RM
F
rr
RRM
F0
VJ
tot
- Power dissipation within the diode
- Turn-on loss in the commutating switch
F
J
thJC
2010 IXYS all rights reserved
average forward current
thermal resistance junction to case
junction capacitance
Definition
max. repetitive reverse voltage
reverse current
forward voltage
threshold voltage
slope resistance
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
for power loss calculation only
Applications:
● Antiparallel diode for high frequency
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
● Uninterruptible power supplies (UPS)
Conditions
V
V
I
I
I
I
rectangular
t = 10 ms
I
-di
V =
F
F
F
F
F
R
R
R
switching devices
supplies (SMPS)
=
F
=
=
=
=
=
=
/dt
200
15
Data according to IEC 60747and per diode unless otherwise specified
400
400
=
1
10
20
10
20
A;
V;
V
V
A
A
A
A
200
V
(50 Hz), sine
R
f = 1 MHz
A/µs
=
d =
2
270
0.5
V
3
T
T
T
T
T
T
T
T
T
T
T
T = 125°C
T
T = 125°C
VJ
VJ
VJ
VJ
VJ
C
VJ
C
VJ
VJ
VJ
VJ
VJ
VJ
= 25
=
=
=
=
= 145°C
= 175°C
=
= 45°C
=
=
=
150
150
25
25
25
25
25
25
DPG 10 P 400 PJ
● Housing:
●rIndustry standard outline
●rDCB isolated backside
●rIsolation Voltage 3000 V
●rEpoxy meets UL 94V-0
●rRoHS compliant
V
I
t
Package:
FAV
°C
°C
°C
°C
°C
°C
°C
°C
°C
rr
RRM
min.
=
=
=
-55
R a t i n g s
ISOPLUS220
typ.
400
5.5
16
45
70
Backside: isolated
10
45 ns
4
max.
0.18
1.28
1.48
1.03
1.24
0.80
2.50
V
A
400
175
130
10
20
60
1
20100212a
Unit
K/W
mΩ
mA
µA
pF
°C
ns
ns
W
V
V
V
V
V
A
V
A
A
A

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DPG10P400PJ Summary of contents

Page 1

... FSM I max. reverse recovery current RM t reverse recovery time rr C junction capacitance J IXYS reserves the right to change limits, conditions and dimensions. 2010 IXYS all rights reserved © Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● ...

Page 2

... IXYS reserves the right to change limits, conditions and dimensions. 2010 IXYS all rights reserved © Conditions 1) per pin second minute Part Name Marking on Product DPG10P400PJ Data according to IEC 60747and per diode unless otherwise specified DPG 10 P 400 PJ Ratings min. typ. 0.50 -55 20 3600 ...

Page 3

... Outlines ISOPLUS220 IXYS reserves the right to change limits, conditions and dimensions. 2010 IXYS all rights reserved © SYM Note NOTE: 1. Bottom heatsink is electrically isolated from Pin ...

Page 4

... 100 200 300 400 500 600 -di /dt [A/µs] F Fig. 7 Typ. recovery energy E versus -di /dt rec F IXYS reserves the right to change limits, conditions and dimensions. 2010 IXYS all rights reserved © 0 125° 270 0 0.2 [µ ...

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