DPG20C400PC IXYS, DPG20C400PC Datasheet - Page 4
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DPG20C400PC
Manufacturer Part Number
DPG20C400PC
Description
Manufacturer
IXYS
Datasheet
1.DPG20C400PC.pdf
(4 pages)
Specifications of DPG20C400PC
Vrrm, (v)
400
Ifavm, D = 0.5, Total, (a)
20
Ifavm, D = 0.5, Per Diode, (a)
10
@ Tc, (°c)
145
Ifrms, (a)
35
Ifsm, 10 Ms, Tvj=45°c, (a)
150
Vf, Max, Tvj =150°c, (v)
1.03
@ If, (a)
10
Trr, Typ, Tvj =25°c, (ns)
45
Irm , Typ, Tvj =100°c, (a)
6.0
@ -di/dt, (a/µs)
200
Tvjm, (°c)
175
Rthjc, Max, (k/w)
2.30
Package Style
TO-263AB
IXYS reserves the right to change limits, conditions and dimensions.
©
[A]
E
[µJ]
K
I
F
rec
2010 IXYS all rights reserved
f
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
30
25
20
15
10
25
20
15
10
5
0
5
0
0.0
0
0
Fig. 4 Dynamic parameters
Fig. 7 Typ. recovery energy
Fig. 1 Forward current I
I
Q
RM
rr
I
F
T
= 5 A
100
0.4
VJ
10 A
20 A
Q
E
40
forward voltage drop V
= 25°C
rec
rr
125°C
, I
-di
versus -di
RM
200
0.8
F
T
/dt [A/µs]
V
versus T
VJ
T
V
80
F
VJ
R
[°C]
[V]
= 125°C
= 270 V
300
1.2
F
/dt
VJ
120
F
400
1.6
versus
F
160
500
2.0
[µC]
[ns]
Q
t
Z
[K/W]
rr
rr
thJC
100
0.4
0.3
0.2
0.1
0.0
80
60
40
20
0
3
2
1
0
Fig. 5 Typ. reverse recovery time
0
0
1
Fig. 2 Typ. reverse recovery charge
Fig. 8 Transient thermal resistance junction to case
T
V
VJ
R
= 125°C
= 270 V
100
100
t
rr
Q
versus -di
rr
-di
versus -di
Data according to IEC 60747and per diode unless otherwise specified
200
200
-di
F
/dt [A/µs]
F
/dt [A/µs]
F
T
V
300
300
/dt
VJ
R
10
F
= 125°C
/dt
= 270 V
I
400
400
F
= 20 A
10 A
10 A
20 A
5 A
5 A
500
500
t [ms]
100
V
[V]
I
[A]
FR
RM
12
10
14
12
10
8
6
4
2
0
8
6
4
2
0
0
0
Fig. 6 Typ. forward recovery voltage
Fig. 3 Typ. reverse recovery current
DPG 20 C 400 PC
V
T
V
100
FR
100
VJ
R
V
= 125°C
I
= 270 V
RM
FR
-di
1000
versus -di
and t
-di
200
200
F
F
/dt [A/µs]
/dt [A/µs]
fr
versus di
300
300
T
V
I
F
VJ
F
R
/dt
= 270 V
= 10 A
= 125°C
20 A
400
400
F
/dt
10 A
5 A
10000
t
500
fr
500
20100210a
350
300
250
200
150
100
50
0
[ns]
t
fr