DNA30E2200FE IXYS, DNA30E2200FE Datasheet - Page 4

• Manufacturer Part Number: DNA30E2200FE
• Description: Rectifier (Standard) Diodes
• Manufacturer: IXYS

Specifications of DNA30E2200FE

• Vrrm, (v): 2200
• Ifavm, Total, (a): 30
• Ifavm, Per Diode, (a): 30
• @ Tc, (°c): 105
• Prsm, (kw): -
• Ifrms, (a): 70
• Ifsm, 10 Ms, Tvj = 45°c, (a): 370
• Vt0, (v): 0.88
• Rt, (mohms): 12.2
• Tvjm, (°c): 175
• Rthjc, Max, (k/w): 1.35
• Rthch, (k/w): 0.20
• Package Style: i4-pac

IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
[A]
P
[W]
[K/W]
Fig. 4 Power dissipation vs. direct output current & ambient temperature, sine 180°
Z
I
F
100
tot
1.4
1.2
1.0
thJC
0.8
0.6
0.4
0.2
0.0
80
60
40
20
80
60
40
20
0.001
0
0
0.0
Fig. 1 Forward current versus
0
Fig. 6 Transient thermal impedance junction to case
T
T
T
0.5
VJ
VJ
VJ
voltage drop per diode
= 25°C
10
= 175°C
= 125°C
1.0
V
F
20
I
[V]
F(AV)M
0.01
1.5
30
[A]
2.0
2.5
40
I
[A]
t [s]
FSM
0.1
400
300
200
100
0
0.001
0
Fig. 2 Surge overload current
20
40
Data according to IEC 60747and per diode unless otherwise specified
0.01
60
T
amb
1
t [s]
80 100 120 140 160
[°C]
0.1
15 K/W
R
1 K/W
2 K/W
3 K/W
5 K/W
8 K/W
thKA
=
1
10
I
F(AV)M
[A
[A]
I
2
2
t
s]
10
10
40
30
20
10
DNA 30 E 2200 FE
0
3
2
Fig. 5 Max. forward current versus
0
1
Constants for Z
1 0.03
2 0.072
3 0.122
4 0.736
5 0.39
Fig. 3 I
i
25 50 75 100 125 150 175 200
R
thi
case temperature, sine180°
(K/W)
2
t versus time per diode
2
T
3
thJC
C
t [ms]
0.0065
0.083
0.152
0.0003
0.4
[°C]
4 5 6 7 8 9 0
t
calculation:
i
(s)
20110822a
1