VVZB120-16ioX IXYS, VVZB120-16ioX Datasheet - Page 7

• Manufacturer Part Number: VVZB120-16ioX
• Description: 3-Phase Rectifier Bridge with Brake
• Manufacturer: IXYS

Specifications of VVZB120-16ioX

• Vrrm, Rect, (v): 1600
• Idav, Rec, (a): 120
• @ Th, Rect, (°c): -
• @ Tc, Rect, (°c): 80
• Vces, Igbt, (v): 1200
• Ic80, Igbt, (a): 107
• Vrrm, Fast Diode, (v): 1200
• If(av), Fast Diode, (a): 40
• Trr, Fast Diode, (ns): 150
• Package Style: V2-Pack

IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Brake IGBT
V
[K/W]
[A]
[V]
Z
I
C
GE
thJC
200
150
100
0.3
0.2
0.1
0.0
50
20
15
10
0.001
0
5
0
Fig. 1 Typ. output characteristics
0
0
Fig. 4 Typ. turn-on gate charge
Fig. 7 Transient thermal impedance junction to case
V
GE
I
V
T
100
= 15 V
C
VJ
CE
1
= 25°C
= 100 A
= 600 V
Q
V
G
200
CE
[nC]
0.01
2
[V]
T
VJ
300
= 125°C
3
400
t [s]
[mJ]
0.1
[A]
I
E
C
200
150
100
50
20
16
12
0
8
4
0
Fig. 2 Typ. output characteristics
0
0
Fig. 5 Typ. switching energy
T
R
V
V
T
VJ
VJ
E
CE
GE
G
V
= 125°C
40
off
= 6.8 Ω
= 125°C
GE
= 600 V
= ±15 V
1
Data according to IEC 60747and per diode unless otherwise specified
= 15 V
versus collector current
17 V
19 V
80
1
I
1 0.05
2 0.035
3 0.12
4 0.045
V
C
2
E
CE
on
120 160 200
[A]
R
[V]
i
3
0.002
0.03
0.03
0.08
13 V
11 V
4
t
i
9 V
10
[mJ]
[A]
I
E
C
200
160
120
Fig. 3 Typ. transfer characteristics
80
40
16
14
12
10
0
8
6
5
4
Fig. 6 Typ. switching energy
VVZB120-16ioX
E
E
T
I
V
V
T
C
VJ
6
CE
GE
VJ
off
on
=
= 125°C
= 125°C
8
= 600 V
= ±15 V
7
versus gate resistance
100 A
8
12
T
R
VJ
V
G
9 10 11 12 13
GE
= 25°C
[Ω]
16
[V]
20
20111115b
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