VUM33-06PH IXYS, VUM33-06PH Datasheet - Page 5

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VUM33-06PH

Manufacturer Part Number
VUM33-06PH
Description
1 Ph. PFC Modules (1 Ph. Bridge + MOSFET Boost)
Manufacturer
IXYS
Datasheet

Specifications of VUM33-06PH

Vdss, Max, (v)
600
Id25, Tc = 25°c, (a)
47
Rds(on), Max, Tj = 25°c, (mohm)
0.12
Vrrm, Boost Diodes, (v)
600
Vrrm, Rectifier Diodes, (v)
800
Package Style
V1-B-Pack
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
V
normalized
normalized
[A]
R
I
D
DSS
DSon
1.16
1.12
1.08
1.04
1.00
0.96
0.92
3.0
2.5
2.0
1.5
1.0
0.5
70
60
50
40
30
20
10
0
-40 -20
-25
0
Fig. 1 Drain source breakdown voltage
Fig. 3 Typical output characteristics
Fig. 5 Drain source on-state resistance
V
I
T
D
I
J
GS
DSS
= 25°C
= 20 A
= 10 V
0
= 1 mA
V
R
2
DSS
DSon
0
25
versus junction temperature
versus junction temperature
20
4
40
50
T
V
T
VJ
DS
J
[°C]
60
[°C]
V
[V]
GS
75
R
6
= 15/10 V
80 100 120 140
DSon
100
R
normalized
DSon
8
125
6.5 V
5.5 V
6 V
5 V
7 V
150
10
300
250
200
150
100
50
R
[mΩ]
DSon
normalized
R
[A]
I
[A]
D
DSon
I
D
2.4
2.0
1.6
1.2
0.8
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
2
0
0
Fig. 2 Typical transfer characteristics
Fig. 4 Typical output characteristics
Fig. 6 Drain source on-state resistance
5 V
T
J
= 125°C
10
R
at V
3
4
5.5 V
DSon
GS
versus I
= 10 V and I
20
4
8
V
V
VUM 33-06PH
I
T
DS
GS
D
D
J
30
= 125°C
normalized to R
[A]
[V]
[V]
V
D
12
GS
5
V
= 20 A
GS
=
40
= 15/10 V
6 V
6.5/7/10/15 V
T
T
J
VJ
= 25°C
16
6
= 125°C
50
DSon
20100921b
6.5 V
5.5 V
5 V
6 V
7 V
5 - 8
60
20
7

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