VND830M STMicroelectronics, VND830M Datasheet
VND830M
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VND830M Summary of contents
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... UNDERVOLTAGE AND OVERVOLTAGE SHUTDOWN LOSS OF GROUND PROTECTION VERY LOW STAND-BY CURRENT REVERSE BATTERY PROTECTION (**) DESCRIPTION The VND830MSP is a monolithic device designed in STMicroelectronics VIPower m0-3 Technology, intended for driving any kind of load with one side connected to ground. Active V pin voltage clamp protects the device ...
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... VND830MSP ABSOLUTE MAXIMUM RATING Symbol V DC Supply Voltage Reverse DC Supply Voltage Reverse Ground Pin Current GND I DC Output Current OUT - I Reverse DC Output Current OUT I DC Input Current Status Current STAT Electrostatic Discharge (Human Body Model: R=1.5K - INPUT V - STATUS ESD ...
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... =11.7V OUT R =6.5 from V =1. OUT V =10.4V OUT R =6.5 from V =11. OUT V =1.3V OUT Test Conditions V = 1.25V 3.25V 1mA -1mA IN VND830MSP Value 1.7 (1) (2) 51.7 37 Min Typ Max 5 5 120 = - Min Typ Max ...
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... VND830MSP ELECTRICAL CHARACTERISTICS (continued OUTPUT DIODE CC Symbol Parameter V Forward on Voltage F STATUS PIN Symbol Parameter V Status Low Output Voltage I STAT I Status Leakage Current LSTAT Status Pin Input C STAT Capacitance V Status Clamp Voltage SCL PROTECTIONS (see note 1) Symbol Parameter T Shut-down Temperature TSD T Reset Temperature ...
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... Output Current < 10% t d(off) INPUT OUTPUT VND830MSP 90% dV /dt OUT (off STATUS < TSD (T > TSD 5/19 1 ...
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... VND830MSP ELECTRICAL TRANSIENT REQUIREMENTS ON V ISO T/R 7637/1 Test Pulse +26.5 V ISO T/R 7637/1 Test Pulse CLASS C All functions of the device are performed as designed after exposure to disturbance. E One or more functions of the device is not performed as designed after exposure and cannot be returned to proper operation without replacing the device ...
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... OUTPUT VOLTAGE STATUS n INPUT n OUTPUT VOLTAGE STATUS n INPUT n OUTPUT VOLTAGE STATUS INPUT n OUTPUT CURRENT STATUS n NORMAL OPERATION n UNDERVOLTAGE V USDhyst V USD n undefined OVERVOLTAGE V >V V < OPEN LOAD with external pull-up V >V OUT OPEN LOAD without external pull-up n OVERTEMPERATURE T TSD VND830MSP OL 7/19 1 ...
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... VND830MSP APPLICATION SCHEMATIC +5V +5V +5V R prot R C prot R prot R prot GND PROTECTION NETWORK REVERSE BATTERY Solution 1: Resistor in the ground line (R can be used with any type of load. The following is an indication on how to dimension the R resistor. GND 1) R 600mV / I . GND S(on)max (-I ) ...
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... OFF when the module is in standby. The values of V the Electrical Characteristics section. V batt DRIVER + LOGIC + GROUND VND830MSP ) connected between OUTPUT pin and like the +5V line used higher than OUT ; this results in the following condition =(V /(R +R ))R < Olmin ...
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... VND830MSP Off State Output Current IL(off1) (uA) 2.5 2.25 Off state 2 Vcc=36V Vin=Vout=0V 1.75 1.5 1.25 1 0.75 0.5 0.25 0 -50 - (°C) Input Clamp Voltage Vicl (V) 8 7.8 Iin=1mA 7.6 7.4 7.2 7 6.8 6.6 6.4 6.2 6 -50 - (°C) Status Low Output Voltage Vstat (V) 0.8 0.7 Istat=1.6mA 0.6 0.5 0.4 0.3 0.2 0.1 0 -50 - (°C) 10/19 High Level Input Current ...
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... Input High Level Vih (V) 3.6 3.4 3.2 3 2.8 2.6 2.4 2.2 2 100 125 150 175 Input Hysteresis Voltage Vhyst (V) 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 100 125 150 175 VND830MSP CC Tc=150°C Tc=25°C Tc= - 40°C Iout= Vcc (V) -50 - 100 125 Tc (°C) -50 - 100 125 Tc (°C) 35 ...
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... VND830MSP Overvoltage Shutdown Vov ( -50 - (°C) Turn-on Voltage Slope dVout/dt(on) (V/ms) 800 700 Vcc=13V Rl=6.5Ohm 600 500 400 300 200 100 0 -50 - (º LIM case Ilim ( Vcc=13V ...
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... C= Repetitive Pulse at T =125ºC Jstart Conditions: V =13.5V CC Values are generated with case of repetitive pulses, T jstart the temperature specified above for curves B and Demagnetization 1 L(mH ) (at beginning of each demagnetization) of every pulse must not exceed Demagnetization VND830MSP 100 Demagnetization t 13/19 ...
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... VND830MSP PowerSO-10™ PC Board Layout condition of R and thickness=35 m, Copper areas: from minimum pad lay-out to 8cm R Vs PCB copper area in open box free air condition thj-amb RTHj_amb (°C/ 14/19 PowerSO-10™ THERMAL DATA measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm, ...
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... R2 Pd2 T_amb 0.01 0.1 1 Time (s) Pulse calculation formula Z TH where Thermal Parameter Area/island (cm R1 (°C/ (°C/ R3( °C/W) R4 (°C/W) R5 (°C/W) R6 (°C/W) C1 (W.s/°C) C2 (W.s/°C) C3 (W.s/°C) C4 (W.s/°C) C5 (W.s/°C) C6 (W.s/°C) VND830MSP 10 100 1000 = – TH THtp = 0.5 0.15 0.8 0.7 0 0.0006 2.10E-03 0.013 0.3 0. 0.5 cm ...
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... VND830MSP PowerSO-10™ MECHANICAL DATA DIM. MIN. A 3.35 A (*) 3.4 A1 0.00 B 0.40 B (*) 0.37 C 0.35 C (*) 0.23 D 9.40 D1 7.40 E 9.30 E2 7.20 E2 (*) 7.30 E4 5.90 E4 (*) 5. 1.25 F (*) 1.20 H 13.80 H (*) 13. 1.20 L (*) 0.80 0º (*) 2º (*) Muar only POA P013P 16/19 mm. TYP MAX. 3.65 3.6 0.10 0.60 0.53 0.55 0.32 9.60 7.60 9.50 7.60 7.50 6.10 6.30 1.27 1.35 1.40 14.40 14.35 0.50 1.80 1.10 8º 8º SEATING PLANE DETAIL "A" 0.25 D ...
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... A 0.67 - 0.73 0.54 - 0.6 All dimensions are in mm. 1.27 Base Q.ty Bulk Q.ty Tube length (± 0.5) Casablanca 50 Muar 1.5 1.5 11.5 6.5 2 End Top No components cover 500mm min tape VND830MSP CASABLANCA 1000 532 10.4 16.4 1000 532 4.9 17.2 REEL DIMENSIONS Base Q.ty 600 Bulk Q.ty 600 A (max) 330 B (min) 1.5 C (± -0) 24 ...
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... VND830MSP REVISION HISTORY Date Revision - Minor changes - Current and voltage convention update (page 2). - “Configuration diagram (top view) & suggested connections for unused and n.c. pins” insertion (page 2). 2 Jul 2004 OUTPUT DIODE section update (page 4 PROTECTIONS note insertion (page 4) - Revision History table insertion (page 18) ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics GROUP OF COMPANIES http://www.st.com VND830MSP 19/19 ...