STP30NF10FP STMicroelectronics, STP30NF10FP Datasheet - Page 3

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STP30NF10FP

Manufacturer Part Number
STP30NF10FP
Description
N-Channel 100 V - 0.038 ohm - 35 A TO-220FP Low Gate Charge STripFETII Power MOSFET
Manufacturer
STMicroelectronics
Datasheet

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0
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
(
Safe Operating Area for TO-220
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Pulse width limited by safe operating area.
Symbol
Symbol
Symbol
I
V
SDM ( )
t
t
I
Q
Q
d(on)
d(off)
SD (*)
RRM
I
Q
Q
SD
t
t
t
rr
gs
gd
r
f
rr
g
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay Time
Fall Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
V
(Resistive Load, Figure 3)
V
V
R
(Resistive Load, Figure 3)
I
I
V
(see test circuit, Figure 5)
SD
SD
R
DD
DD
DD
DD
G
G
= 4.7
= 30 A
= 30 A
= 80 V I
= 50 V
= 50 V
= 55 V
= 4.7
Test Conditions
Test Conditions
Test Conditions
D
= 30 A V
Safe Operating Area for TO-220FP
di/dt = 100A/µs
V
STB30NF10 STP30NF10 STP30NF10FP
V
V
T
GS
GS
GS
j
I
I
= 150°C
D
D
GS
= 0
= 10 V
= 15 A
= 10 V
= 15 A
= 10V
Min.
Min.
Min.
Typ.
Typ.
Typ.
390
110
8.0
7.5
15
40
40
15
45
10
Max.
Max.
Max.
140
1.3
55
35
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
A
A
V
A
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