CS200 Fujitsu, CS200 Datasheet

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CS200

Manufacturer Part Number
CS200
Description
65nm CMOS Technology
Manufacturer
Fujitsu
Datasheet

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65nm CMOS Technology, CS200 / CS200A
Gate length
Core VDD
Gate oxide thickness (physical)
Gate electrode
Source / drain electrode
Interconnects
Metal 1 pitch
Inter-level dielectric
Drain current enhancement
As miniaturization of silicon devices progresses,
Fujitsu provides the most competitive, world-class
technology to ASIC and COT customers. Fujitsu's
65nm technology has shrunk gates by 25% when
compared to the 90nm technology.
Specifications
Features
• The 30nm long gate, only 75% the size of the
• 20 to 30% faster performance than the 90nm
Description
CS100 transistors.
generation.
65nm (CS200)
30nm
1.0V
1.1nm
NiSi / Poly-Si
NiSi
11-Cu + 1-Al
0.18µm
Porous ULK (k = 2.25)
Advanced stress control
Fujitsu will start tape-out acceptance for the
technology in early 2006.
• Transistor density doubled compared with the
• SRAM cell area reduced 50% compared with the
90nm generation.
90nm generation.
65nm (CS200A)
50nm
1.2V
1.7nm
CoSi2 / Poly-Si
CoSi2

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CS200 Summary of contents

Page 1

... CMOS Technology, CS200 / CS200A Description As miniaturization of silicon devices progresses, Fujitsu provides the most competitive, world-class technology to ASIC and COT customers. Fujitsu's 65nm technology has shrunk gates by 25% when compared to the 90nm technology. Features • The 30nm long gate, only 75% the size of the CS100 transistors. • ...

Page 2

... Fujitsu's advanced tech- nology, which was developed for the company's high-performance servers. The chip size of the CS200 is only 60% the size of CS100, when making the same spec LSI, which is 4M gate logic and 2M gate macro. (SRAM: 0.5Mbit, PLL, etc.) ...

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