IXGH30H30 IXYS Corporation, IXGH30H30 Datasheet - Page 2

• Manufacturer Part Number: IXGH30H30
• Description: 300V HiPerFET IGBT
• Manufacturer: IXYS Corporation

© 2000 IXYS All rights reserved
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
d(on)
d(off)
d(on)
d(off)
ri
fi
ri
fi
fs
on
oes
off
off
thJC
thCK
ies
res
g
ge
gc
Test Conditions
I
Pulse test, t £ 300 ms, duty cycle £ 2 %
C
= I
V
I
Inductive load, T
I
V
Remarks: Switching times may increase
for V
increased R
Inductive load, T
I
V
Remarks: Switching times may
increase for V
higher T
C
C
C
CE
CE
CE
= I
= I
= I
C90
= 25 V, V
= 0.8 V
= 0.8 V
C90
; V
C90
CE
C90
, V
, V
(Clamp) > 0.8 • V
, V
CE
J
or increased R
GE
GE
GE
= 10 V,
CES
CES
G
= 15 V, V
= 15 V, L = 100 mH,
= 15 V, L = 100 mH
GE
, R
, R
CE
= 0 V, f = 1 MHz
(Clamp) > 0.8 • V
G
G
J
J
= R
= R
= 25°C
= 125°C
CE
off
off
= 0.5 V
G
CES
= 1.0 W
= 1.0 W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
(T
, higher T
J
= 25°C, unless otherwise specified)
CES
CES
4,881,106
4,931,844
,
J
or
min.
20
Characteristic Values
5,017,508
5,034,796
2500
typ.
0.25
210
145
170
180
250
300
1.0
0.3
1.6
28
60
23
50
25
40
25
40
max.
0.62 K/W
5,049,961
5,063,307
170
420
450
2.4 mJ
35
75
K/W
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
S
5,187,117
5,237,481
TO-247 AD (IXGH) Outline
Dim. Millimeter
5,486,715
5,381,025
A
B
C
D
E
F
G
H
J
K
L
M
N
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
15.75 16.26 0.610 0.640
Min. Max.
3.55 3.65 0.140 0.144
4.32 5.49 0.170 0.216
1.65 2.13 0.065 0.084
10.8 11.0 0.426 0.433
5.4
1.0
4.7
0.4
1.5 2.49 0.087 0.102
-
IXGH 30N30
6.2 0.212 0.244
4.5 -
1.4 0.040 0.055
5.3 0.185 0.209
0.8 0.016 0.031
Min.
Inches
0.177
Max.
2 - 4