IXBH 10N170 IXYS Corporation, IXBH 10N170 Datasheet

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IXBH 10N170

Manufacturer Part Number
IXBH 10N170
Description
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
Manufacturer
IXYS Corporation
Datasheet
High Voltage, High Gain
BIMOSFET
Bipolar MOS Transistor
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
M
Weight
Symbol
BV
V
I
I
V
© 2003 IXYS All rights reserved
CM
C25
C90
GES
CES
JM
J
stg
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
T
Mounting torque (M3) (TO-247)
TO-247 AD
TO-268
Test Conditions
I
Temperature Coefficent
I
Temperature Coefficent
V
V
V
I
V
Clamped inductive load
C
C
C
C
C
C
C
J
J
CE
GE
CE
GE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 25°C
= 15 V, T
TM
= 250 µA, V
= 250 µA, V
= 0.8 V
= 0 V
= 0 V, V
= I
C90
Monolithic
, V
CES
GE
GE
VJ
= 15 V
= ±20 V
= 125°C, R
GE
CE
= V
= 0 V
GE
GE
= 1 MΩ
G
= 33 Ω
T
T
T
(T
J
J
J
J
= 25°C
= 125°C
= 125°C
= 25°C, unless otherwise specified)
IXBH 10N170
IXBT 10N170
1700
min.
V
3.0
I
Characteristic Values
CM
CES
-55 ... +150
-55 ... +150
Maximum Ratings
- 0.24
= 1350
=
0.10
typ.
3.4
4.1
1.13/10Nm/lb.in.
1700
1700
260
140
150
300
±20
±30
20
10
40
20
max.
±100
6
4
100
3.8
5.0
10
%/K
%/K
°C
°C
°C
°C
°C
µA
µA
nA
V
V
V
V
A
A
A
A
V
W
g
g
V
V
V
V
TO-268 (IXBT)
TO-247 AD (IXBH)
G = Gate,
E = Emitter,
Features
Applications
Advantages
V
I
V
C25
High Blocking Voltage
JEDEC TO-268 surface and
JEDEC TO-247 AD
Low conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Molding epoxies meet UL 94 V-0
flammability classification
AC motor speed control
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Capacitor discharge circuits
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
CES
CE(sat)
G
G
C
= 1700 V
=
=
E
C = Collector,
TAB = Collector
E
3.8 V
20 A
DS99048(05/03)
C (TAB)
(TAB)

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IXBH 10N170 Summary of contents

Page 1

... CES CE CES ±20 V GES CE(sat) C C90 GE © 2003 IXYS All rights reserved IXBH 10N170 IXBT 10N170 Maximum Ratings 1700 = 1 MΩ 1700 GE ±20 ± Ω 1350 CES 140 -55 ... +150 150 -55 ...

Page 2

... J min. typ. max 360 Min Recommended Footprint 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 IXBH 10N170 IXBT 10N170 TO-247 AD Outline Dim. Millimeter nC Min ...

Page 3

... 20A IXBH 10N170 IXBT 10N170 Fig. 2. Extended Output Characteristics @ 25 deg Volts C E Fig. 4. Temperature Dependence 32A ...

Page 4

... I = 20A 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 IXBH 10N170 IXBT 10N170 Fig. 8. Forward Voltage Drop of Intrinsic Diode º 0 ...

Page 5

... Fig. 12. Capacitance 1 000 oes C res Volts C E © 2003 IXYS All rights reserved 1 0 0.8 0.7 0.6 0.5 0.4 0.3 0 IXBH 10N170 IXBT 10N170 Fig. 13. Maximum Transient Thermal Resistance Pulse Width - milliseconds 1 000 ...

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