IXTQ26N50PS IXYS Corporation, IXTQ26N50PS Datasheet
IXTQ26N50PS
Manufacturer Part Number
IXTQ26N50PS
Description
Discrete MOSFETs: Standard N-channel Types
Manufacturer
IXYS Corporation
Datasheet
1.IXTQ26N50PS.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTQ26N50PS
Manufacturer:
IXYS
Quantity:
5 000
Company:
Part Number:
IXTQ26N50PS
Manufacturer:
FSC
Quantity:
548
PolarHV
Power MOSFET
© 2004 IXYS All rights reserved
N-Channel Enhancement Mode
Symbol
(T
V
V
I
I
R
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
GSS
DSS
D25
DM
AR
GS(th)
J
JM
stg
L
DSS
DS(on)
DGR
GSS
GSM
AR
D
DSS
AS
d
J
= 25°C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
T
T
Continuos
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-3P
PLUS220
Test Conditions
V
S
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
TM
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
GS
, di/dt ≤ 100 A/µs, V
DSS
, I
D
D
DC
D
= 250 µA
= 250µA
, V
= 0.5 I
G
= 4 Ω
DS
= 0
D25
(TO-3P)
GS
= 1 MΩ
DD
T
≤ V
J
= 125°C
DSS
Advanced Technical Information
JM
,
IXTV 26N50PS
IXTQ 26N50P
IXTV 26N50P
500
Min. Typ.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
500
500
±20
±30
400
150
300
1.0
26
78
26
40
10
6
5
±100
250
230
Max.
5.0
25
V/ns
mΩ
nA
µA
µA
mJ
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
g
J
Advantages
PLUS220 (IXTV)
PLUS220SMD (IXTV_S)
G = Gate
S = Source
Features
TO-3P (IXTQ)
V
R
I
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
D25
DSS
DS(on)
G
G
D
D
G
S
S
S
≤ ≤ ≤ ≤ ≤ 230 mΩ Ω Ω Ω Ω
= 500
=
D = Drain
TAB = Drain
26
DS99206(11/04)
D (TAB)
D (TAB)
D (TAB)
V
A
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IXTQ26N50PS Summary of contents
Page 1
PolarHV TM Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V Continuos GSS V Transient GSM 25°C ...
Page 2
... Terminals Gate 2 - Drain 3 - Source TAB - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J Min. ...
Page 3
Fig. 1. Output Characteristics @ 10V Volts D S Fig. 3. Output Characteristics @ 125 ...
Page 4
Fig. 7. Input Adm ittance 125ºC J 25ºC 10 -40º 3 Volts G S Fig. 9. Source Curre nt vs. Source-To-Drain Voltage ...
Page 5
Fig . ...