CD4025BMS Intersil Corporation, CD4025BMS Datasheet - Page 3

• Manufacturer Part Number: CD4025BMS
• Description: Rad-hard Cmos Nor Gate
• Manufacturer: Intersil Corporation

Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input
Operating Temperature Range . . . . . . . . . . . . . . . . -55
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265
Supply Current
Input Leakage
Input Leakage
Output Voltage
Output Voltage
Output Current (Sink)
Output Current (Sink)
Output Current (Sink)
Output Current (Source)
Output Current (Source)
Output Current (Source)
Output Current (Source)
N Threshold Voltage
P Threshold Voltage
Functional
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
NOTES: 1. All voltages referenced to device GND, 100% testing being
(Voltage Referenced to VSS Terminals)
Package Types D, F, K, H
At Distance 1/16
10s Maximum
PARAMETER
2. Go/No Go test with limits applied to inputs
implemented.
Specifications CD4000BMS, CD4001BMS, CD4002BMS, CD4025BMS
1/32 Inch (1.59mm
SYMBOL
VOH15
VOL15
IOH5A
IOH5B
IOH10
IOH15
IOL10
IOL15
VNTH
VPTH
IOL5
IDD
VIH
VIH
VIL
VIL
IIH
IIL
F
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
VDD = 20V, VIN = VDD or GND
VDD = 18V, VIN = VDD or GND
VIN = VDD or GND
VIN = VDD or GND
VDD = 15V, No Load
VDD = 15V, No Load (Note 3)
VDD = 5V, VOUT = 0.4V
VDD = 10V, VOUT = 0.5V
VDD = 15V, VOUT = 1.5V
VDD = 5V, VOUT = 4.6V
VDD = 5V, VOUT = 2.5V
VDD = 10V, VOUT = 9.5V
VDD = 15V, VOUT = 13.5V
VDD = 10V, ISS = -10 A
VSS = 0V, IDD = 10 A
VDD = 2.8V, VIN = VDD or GND
VDD = 20V, VIN = VDD or GND
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
VDD = 5V, VOH > 4.5V, VOL < 0.5V
VDD = 5V, VOH > 4.5V, VOL < 0.5V
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
CONDITIONS (NOTE 1)
0.79mm) from case for
o
o
C to +125
C to +150
VDD = 20
VDD = 18V
VDD = 20
VDD = 18V
10mA
o
o
o
C
C
C
7-651
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . .
Maximum Package Power Dissipation (PD) at +125
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
Ceramic DIP and FRIT Package . . . . .
Flatpack Package . . . . . . . . . . . . . . . .
For TA = -55
For TA = +100
For TA = Full Package Temperature Range (All Package Types)
SUBGROUPS
3. For accuracy, voltage is measured differentially to VDD. Limit
GROUP A
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
is 0.050V max.
8A
8B
1
2
3
1
2
3
1
2
3
1
1
1
1
1
1
1
1
1
7
7
o
C to +100
o
C to +125
+25
+25
+25
+25
+25
+25
TEMPERATURE
o
o
o
o
o
o
C, +125
C, +125
C, +125
C, +125
C, +125
C, +125
o
C (Package Type D, F, K) . . . . . . 500mW
+125
+125
+125
+125
o
+25
+25
+25
+25
+25
+25
+25
+25
+25
+25
+25
+25
+25
+25
-55
-55
-55
-55
C (Package Type D, F, K) . . . . . Derate
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
C
C
C
C
C
C
C
o
o
C
C
C
C
C
C
C
C
C
C
C
o
o
o
o
C
C
C
C
C, -55
C, -55
C, -55
C, -55
C, -55
C, -55
Linearity at 12mW/
o
o
o
o
o
o
C
C 14.95
C
C
C
C
80
70
VOH >
VDD/2
-1000
-100
-100
0.53
MIN
-2.8
1.4
3.5
0.7
3.5
11
o
o
-
-
-
-
-
-
-
-
-
-
-
-
-
C/W
C/W
ja
LIMITS
o
VDD/2
VOL <
C
MAX
1000
-0.53
-1.8
-1.4
-3.5
-0.7
100
100
0.5
0.5
2.8
1.5
50
50
o
4
-
-
-
-
-
-
-
-
-
C to 200mW
20
20
o
o
UNITS
C/W
C/W
jc
mV
mA
mA
mA
mA
mA
mA
mA
nA
nA
nA
nA
nA
nA
V
V
V
V
V
V
V
V
A
A
A
o
C