VMM1500-0075T2 IXYS Corporation, VMM1500-0075T2 Datasheet
VMM1500-0075T2
Manufacturer Part Number
VMM1500-0075T2
Description
Dual Power Mosfet Module
Manufacturer
IXYS Corporation
Datasheet
1.VMM1500-0075T2.pdf
(3 pages)
Dual Power
MOSFET Module
Phaseleg Configuration
Tentative
Symbol
V
V
I
I
I
I
Symbol
R
V
I
I
C
C
C
Q
Q
Q
t
t
t
t
V
t
R
R
1
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
MOSFET T1 + T2
D25
D80
F25
F80
DSS
GSS
d(off)
d(on)
r
f
rr
DSS
GS
GSth
F
DSon
iss
oss
g
gd
thJC
thJS
rss
gs
additional current limitation by external leads
Conditions
T
T
T
(diode) T
(diode) T
Conditions
V
V
V
V
V
(diode) I
(diode) I
with heat transfer paste
V
Resistive Switching Times
V
I
D
VJ
C
C
GS
DS
DS
GS
GS
GS
GS
= 1200 A; R
= 25°C
= 80°C
= 10 V; V
= 25°C to 150°C
= 0 V; V
= 10 V; V
= 20 V; I
= V
= 10 V; I
= ±20 V; V
DSS
F
F
C
C
= 200 A; -di/dt = 1000 A/µs; V
= 750 A; V
; V
= 25°C
= 80°C
DS
D
D
GS
DS
DS
= I
= 2.5 mA
= 25 V; f = 1 MHz
G
DS
= 0 V; T
= 37 V; I
= 37 V;
= 0.5 Ω
D80
= 0 V
GS
T
1
1
1
1
= 0 V
VJ
VJ
D
= 1200 A
= 125°C
= 25°C
(T
VJ
= 25°C, unless otherwise specified)
DS
= 30 V
min.
Characteristic Values
2
Maximum Ratings
1950
12.8
1.38
0.12
115
580
450
typ.
0.5
1.5
1.0
50
70
40
60
80
1500
1200
1500
1100
11
10
8
9
±20
75
max.
0.15 mA
0.08 K/W
0.7 mΩ
3.0
1.2
4
K/W
mA
nC
nC
nC
µA
nF
nF
nF
ns
ns
ns
ns
ns
V
V
A
A
A
A
V
V
3
1
2
V
I
R
Features
• Trench MOSFETs
• package
Applications
• converters with high power density for
D25
– low R
– optimized intrinsic reverse diode
– low inductive current path
– screw connection to high current
– use of non interchangeable
– Kelvin source terminals for easy drive
– isolated DCB ceramic base plate
– main and auxiliary AC drives of
– 4 quadrant DC drives
– power supplies with low input voltage,
DSS
DS(on)
e.g. from fuel cells or solar cells
VMM 1500-0075T2
main terminals
connectors for auxiliary terminals
possible
electric vehicles
DSon
= 75 V
= 1500 A
= 0.5 mΩ Ω Ω Ω Ω
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VMM1500-0075T2 Summary of contents
Page 1
... V DSS I = 1500 A D25 = 0.5 mΩ Ω Ω Ω Ω R DS(on Features • Trench MOSFETs – low R DSon – optimized intrinsic reverse diode V • package – low inductive current path V – screw connection to high current A main terminals A – use of non interchangeable ...
Page 2
Module Symbol Conditions I per main terminal RMS stg ≤ 1 mA; 50/ ISOL ISOL M Mounting torque (M6) d Terminal connection torque (M6) Symbol Conditions Weight Dimensions 0.0394") ...
Page 3
Product Status Definitions and Disclaimers Datasheet Identification Product Status Tentative Tentative Advanced Under Technical Information development/engineering Preliminary Pilot Production Without Identification Serial Production General — Information in this document is believed to be accurate and reliable. However, IXYS Semiconductors does ...