BUT11APX-1200 NXP Semiconductors, BUT11APX-1200 Datasheet

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BUT11APX-1200

Manufacturer Part Number
BUT11APX-1200
Description
Silicon Diffused Power Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.BUT11APX-1200.pdf (7 pages)
Philips Semiconductors
GENERAL DESCRIPTION
Enhanced performance new generation,high voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
PINNING - SOT186A
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
April 1999
Silicon Diffused Power Transistor
SYMBOL
V
V
V
I
I
P
V
h
t
SYMBOL
V
V
V
I
I
I
I
P
T
T
SYMBOL
R
R
C
CM
f
case isolated
C
CM
B
BM
PIN
FEsat
stg
j
CESM
CBO
CEO
tot
CEsat
CESM
CEO
CBO
tot
th j-hs
th j-a
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
DC current gain
Fall time
PARAMETER
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to heatsink
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
case
CONDITIONS
V
T
I
I
I
CONDITIONS
V
T
CONDITIONS
with heatsink compound
in free air
C
C
C
1 2 3
BE
hs
BE
hs
1
= 2 A; I
= 3 A; V
= 2.5 A; I
≤ 25 ˚C
≤ 25 ˚C
= 0 V
= 0 V
B
CE
= 0.4 A
B1
= 5 V
= 0.5 A
SYMBOL
BUT11APX-1200
b
TYP.
TYP.
MIN.
0.15
15.5
Product specification
170
-65
55
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
MAX.
MAX.
1200
1200
e
1200
1200
c
3.95
550
300
550
150
150
1.0
10
32
10
32
6
6
3
5
-
-
Rev 1.000
UNIT
UNIT
UNIT
K/W
K/W
ns
˚C
˚C
W
W
V
V
V
A
A
V
V
V
V
A
A
A
A

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BUT11APX-1200 Summary of contents

Page 1

... PIN CONFIGURATION case CONDITIONS ≤ 25 ˚ CONDITIONS with heatsink compound in free air 1 Product specification BUT11APX-1200 TYP. MAX. UNIT - 1200 V - 1200 V - 550 0.15 1.0 V 15.5 - 170 300 ...

Page 2

... CONDITIONS Con Bon Boff ohms BB2 Csat 2 0 Csat 100 ˚ Product specification BUT11APX-1200 MIN. TYP. MAX 2500 - 10 - MIN. TYP. MAX 1 2 0.1 550 - - - 0.15 1.0 - 0.91 1 ...

Page 3

... VCEOsust . CEOsust V = 300 VCC T.U. Fig.6. Switching times waveforms with inductive load 0.01. p requirements. Bon 3 Product specification BUT11APX-1200 ICsat ton toff IB1 30ns -IB2 VCC LC LB T.U.T. Fig.5. Test circuit inductive load 200 uH ...

Page 4

... Solid lines = typ values 0.5 5V 0.4 0.3 0.2 1V 0.1 0 f(I ) Fig.11. Collector-Emitter saturation voltage Solid lines = typ values 0.1 0.01 0.001 10.00 Fig.12. Transient thermal impedance. = f(IB); T =25˚ Product specification BUT11APX-1200 VBEsat/V 0.1 1 IC/A = f(IC); at IC/IB =4. BEsat VCEsat/V 0.1 1 IC/A = f(IC); at IC/IB =4.8 CEsat Zth / (K/W) BU1706AX 0.5 0.2 0.1 0. ...

Page 5

... Fig.13. Reverse bias safe operating area. T April 1999 IBon -VBB 1,000 1,200 1,400 ≤ T Fig.14. Test circuit for reverse bias safe operating j j max ≤ 1200V Product specification BUT11APX-1200 VCC LC VCL(RBSOAR) PROBE POINT LB T.U.T. area. = 150V -5V 1µH 200µ ...

Page 6

... Fig.15. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". April 1999 10.3 max 3.2 3.0 2.8 seating 15.8 19 max. max. plane 3 2 2.54 0.5 5.08 6 Product specification BUT11APX-1200 4.6 max 2.9 max 6.4 15.8 max 0.6 2.5 1.3 Rev 1.000 1.0 (2x) 0.9 0.7 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1999 BUT11APX-1200 7 Product specification Rev 1.000 ...

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