BCV64B NXP Semiconductors, BCV64B Datasheet - Page 3

• Manufacturer Part Number: BCV64B
• Description: Pnp General Purpose Double Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on a printed-circuit board.
CHARACTERISTICS
T
Notes
1. Group selection will be done on TR1. Due to matched dies, h
2. V
3. V
1999 May 21
R
I
h
V
V
V
C
f
j
CBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
BE
th j-a
= 25 C unless otherwise specified.
c
PNP general purpose double transistor
BEsat
BE
decreases by approximately 2 mV/K with increasing temperature.
decreases by approximately 1.7 mV/K with increasing temperature.
thermal resistance from junction to ambient
collector cut-off current
DC current gain
collector-emitter saturation voltage I
collector-emitter saturation voltage I
base-emitter saturation voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
TR1
TR2
TR1
TR2
TR1
TR1
TR1
TR2
TR1
TR1
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
f = 100 MHz
E
E
C
C
C
C
C
C
C
C
C
E
C
= 0; V
= 0; V
= i
= 2 mA; V
= 2 mA; V
= 10 mA; I
= 100 mA; I
= 10 mA; I
= 100 mA; I
= 2 mA; V
= 10 mA; V
= 2 mA; V
= 10 mA; V
e
= 0; V
3
CB
CB
CONDITIONS
= 30 V
= 30 V; T
CB
note 1
CE
CE
CE
CE
FE
B
B
CE
CE
B
B
= 10 V; f = 1 MHz
= 0.5 mA
= 0.5 mA; note 2
CONDITIONS
= 5 V
= 700 mV; note 1 220
= 5 V; note 3
= 700 mV; note 3
values for TR2 are the same as for TR1.
= 5 mA
= 5 mA; note 2
= 5 V; note 3
= 5 V;
j
= 150 C
220
100
MIN.
600
VALUE
500
4
TYP.
75
250
250
700
850
650
700
Product specification
BCV64B
475
475
MAX.
15
5
300
650
750
820
UNIT
K/W
nA
mV
mV
mV
mV
mV
mV
mV
mV
pF
MHz
UNIT
A