HY27US08281A Hynix Semiconductor, HY27US08281A Datasheet - Page 18

• Manufacturer Part Number: HY27US08281A
• Description: 128mbit 16mx8bit / 8mx16bit Nand Flash Memory
• Manufacturer: Hynix Semiconductor

Rev 0.6 / Nov. 2005
Operating
Current
Stand-by Current (TTL)
Stand-by Current (CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage
Output High Voltage Level
Output Low Voltage Level
Output Low Current (RB#)
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (2.7V - 3.3V)
Output Load (3.0V - 3.6V)
Parameter
Sequential
Read
Program
Erase
Parameter
Table 8: DC and Operating Characteristics
Symbol
(RB#)
I
I
I
I
I
V
V
V
I
V
I
CC1
CC2
CC3
CC4
CC5
I
LO
OL
OH
LI
OL
IH
IL
Table 9: AC Conditions
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
V
V
PRE=WP#=0V/Vcc
PRE=WP#=0V/Vcc
OUT
Test Conditions
IN=
CE#=Vcc-0.2,
I
I
=0 to Vcc (max)
I
I
I
OH
OH
0 to Vcc (max)
CE#=V
V
V
CE#=V
OL
t
OL
OUT
RC
OL
OL
=-100uA
=-400uA
=2.1mA
=100uA
=50ns
=0.2V
=0.4V
=0mA
-
-
-
-
IH
IL
,
,
HY27US(08/16)281A Series
Min
-0.3
2.4
2
8
-
-
-
-
-
-
-
-
-
-
-
1 TTL GATE and CL=100pF
1 TTL GATE and CL=50pF
3.3Volt
Typ
0.4V to 2.4V
10
10
10
10
10
-
-
-
-
-
-
-
-
-
3.3Volt
Value
1.5V
5ns
Vcc+0.3
± 10
± 10
Max
0.8
0.4
20
20
20
50
1
-
-
-
-
-
Unit
mA
mA
mA
mA
mA
mA
uA
uA
uA
V
V
V
V
V
V
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