HY27US081G1M Hynix Semiconductor, HY27US081G1M Datasheet - Page 39
HY27US081G1M
Manufacturer Part Number
HY27US081G1M
Description
1gb Nand Flash
Manufacturer
Hynix Semiconductor
Datasheet
1.HY27US081G1M.pdf
(39 pages)
- Current page: 39 of 39
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MARKING INFORMATION -
Rev 0.2 / May. 2007
- h y n ix
- K O R
- H Y 2 7 x S x x 1 G x M x x x x
- Y : Y e ar (ex: 5= year 20 0 5 , 06 = year 20 0 6 )
- w w : W o rk W eek (e x: 12 = w ork w eek 12 )
- x x : P roce ss C o d e
N o te
- C a p ita l L e tte r
- S m a ll L e tte r
H Y : H yn ix
2 7 : N A N D Fla sh
x : P ow e r S u pp ly
S : C la ssifica tion
x x : B it O rg a n iza tion
1 G : D e n sity
x : M o de
M : V e rsio n
x : P acka ge T yp e
x : P acka g e M a te ria l
x : O p eratin g T e m perature
x : B ad B lo ck
P a ck a g
T S O P 1
U S O P
/
H
x
TSOP1/USOP
Y
x
2
x
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
: H yn ix S ym b ol
: O rigin C o u n try
: P a rt N u m b e r
: U (2 .7 V ~ 3 .6 V )
: S in g le Le vel C e ll+ D o u ble D ie + S m all B lo ck
: 0 8 (x8 ), 1 6 (x1 6)
: 1 G bit
: 1(1n C E & 1R /n B ; S eq u en tial R o w R ead E n able )
: 1 st G e n e ra tio n
: T (4 8 -T S O P 1 ), S (4 8 -U S O P )
: B lan k(N o rm al), P (Lead Free)
: C (0 ℃ ~ 7 0 ℃ ), E (-2 5 ℃ ~ 8 5 ℃ )
: B (In clu d ed B ad B lo ck), S (1 ~ 5 B ad B lo ck),
: Fixed Ite m
: N o n -fixe d Item
2 (1n C E & 1R /n B ; S e qu en tial R o w R e ad D isab le )
M (-3 0℃ ~ 8 5℃ ), I(-4 0 ℃ ~ 8 5 ℃ )
P (A ll G o o d B lock)
7
x
M a rk in g E x a m p le
x
S
HY27US(08/16)1G1M Series
x
Y
x
W
1
W
G
K
Preliminary
O
x
x
M
R
x
39
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