MT16JSS51264HZ Micron Semiconductor Products, MT16JSS51264HZ Datasheet - Page 10

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MT16JSS51264HZ

Manufacturer Part Number
MT16JSS51264HZ
Description
Ddr3 Sdram Sodimm
Manufacturer
Micron Semiconductor Products
Datasheet
Design Considerations
Simulations
Power
PDF: 09005aef8384b3e9
jss16c512x64hz.pdf – Rev. B 8/09 EN
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level. Mi-
cron encourages designers to simulate the signal characteristics of the system’s memo-
ry bus to ensure adequate signal integrity of the entire memory system.
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
4GB (x64, DR) 204-Pin DDR3 SDRAM SODIMM
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
Electrical Specifications
©2008 Micron Technology, Inc. All rights reserved.

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